Load Switching P Channel MOSFET VBsemi Elec 30P06 VB Featuring 60V Drain Source Breakdown Voltage

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Product Description

Product Overview

The 30P06-VB is a P-Channel 60V Trench Power MOSFET designed for load switching applications. It offers low on-resistance and is suitable for various electronic circuits requiring efficient power management.

Product Attributes

Brand: VBsemi
Material Categorization: RoHS Compliant, Halogen-Free
Package: TO-252

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Static Characteristics
Drain-Source Breakdown Voltage	V_DS	V_GS = 0 V, I_D = - 250 A	- 60			V
Gate Threshold Voltage	V_GS(th)	V_DS = V_GS, I_D = - 250 A	- 1.5		- 3	V
Gate-Body Leakage	I_GSS	V_GS = 20 V, V_DS = 0 V			100	nA
Zero Gate Voltage Drain Current	I_DSS	V_DS = - 60 V, V_GS = 0 V			- 1	A
Zero Gate Voltage Drain Current	I_DSS	V_DS = - 60 V, V_GS = 0 V, T_J = 125 C			- 50	A
Zero Gate Voltage Drain Current	I_DSS	V_DS = - 60 V, V_GS = 0 V, T_J = 150 C			- 100	A
On-State Drain Current	I_D(on)	V_DS = - 5 V, V_GS = - 10 V		- 50		A
Drain-Source On-State Resistance	R_DS(on)	V_GS = - 10 V, I_D = - 17 A		0.020
Drain-Source On-State Resistance	R_DS(on)	V_GS = - 4.5 V, I_D = - 14 A		0.025
Drain-Source On-State Resistance	R_DS(on)	V_GS = - 10 V, I_D = - 40 A, T_J = 125 C		0.030
Drain-Source On-State Resistance	R_DS(on)	V_GS = - 10 V, I_D = - 40 A, T_J = 150 C		0.035
Forward Transconductance	g_fs	V_DS = - 15 V, I_D = - 17 A	61			S
Dynamic Characteristics
Input Capacitance	C_iss	V_GS = 0 V, V_DS = - 25 V, f = 1 MHz		2950		pF
Output Capacitance	C_oss			380		pF
Reverse Transfer Capacitance	C_rss			305		pF
Total Gate Charge	Q_g	V_DS = - 30 V, V_GS = - 10 V, I_D = - 40 A		110	165	nC
Gate-Source Charge	Q_gs			19		nC
Gate-Drain Charge	Q_gd			28		nC
Turn-On Delay Time	t_d(on)	V_DD = - 30 V, R_L = 0.6 , I_D - 40 A, V_GEN = - 10 V, R_G = 6		15	23	ns
Rise Time	t_r			70	105	ns
Turn-Off Delay Time	t_d(off)			175	260	ns
Fall Time	t_f			175	260	ns
Source-Drain Diode Ratings and Characteristics
Continuous Current	I_S	T_C = 25 C		- 40		A
Pulsed Current	I_SM			- 80		A
Forward Voltage	V_SD	I_F = - 40 A, V_GS = 0 V		- 1	- 1.6	V
Reverse Recovery Time	t_rr	I_F = - 40 A, dI/dt = 100 A/s		45	70	ns