SOT 23 package PNP transistor XZT S8550 ideal for general purpose electronic circuit applications

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Product Description

Product Overview

The S8550 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is complementary to the S8050 transistor. With a collector current rating of 0.5A, it is suitable for various electronic circuits.

Product Attributes

Brand: X T ELECTRONICS
Marking: 2TY
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-0.1mA, IB=0	-25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0	-5			V
Collector cut-off current	ICBO	VCB=-40V, IE=0			-100	nA
Collector cut-off current	ICEO	VCE=-20V, IB=0			-100	nA
Emitter cut-off current	IEBO	VEB=-3V, IC=0			-100	nA
DC current gain	hFE	VCE=-1V, IC=-50mA	120		400
DC current gain	hFE	VCE=-1V, IC=-500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=-500mA, IB=-50mA			-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=-500mA, IB=-50mA			-1.2	V
Transition frequency	fT	VCE=-10V,IC=-50mA , f=30MHz	150			MHz

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	-40	V
Collector-Emitter Voltage	VCEO	-25	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current	IC	-0.5	A
Collector Power Dissipation	PC	300	mW
Thermal Resistance From Junction To Ambient	RJA	417	/W
Operation Junction and Storage Temperature Range	TJ,Tstg	-55+150

SOT-23 Package Outline Dimensions

Symbol	Dimensions In Millimeters	Dimensions In Inches
A	0.900 1.150	0.035 0.045
A1	0.000 0.100	0.000 0.004
A2	0.900 1.050	0.035 0.041
b	0.300 0.500	0.012 0.020
c	0.080 0.150	0.003 0.006
D	2.800 3.000	0.110 0.118
E	1.200 1.400	0.047 0.055
E1	2.250 2.550	0.089 0.100
e	1.800 2.000	0.071 0.079
e1
L	0.550 REF	0.022 REF
L1	0.300 0.500	0.012 0.020
	0 8	0 8