Silicon N Channel MOSFET XCH 4N65F with 1.95 Ohm Typical RDS ON and 75W Power Dissipation Capability
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Product Description
Product Description
The XCH4N65F is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. The device is packaged in a TO-251 package and complies with RoHS standards.
Product Attributes
- Brand: XCH4N65F
- Material: Silicon N-Channel Power MOSFET
- Certifications: RoHS
Technical Specifications
| Model | VDSS (V) | ID (A) | PD (TC=25) (W) | RDS(ON)typ () | VGS(TH) (V) | Qg (nC) | RJC (/W) | RJA (/W) |
| XCH4N65F | 650 | 4 | 75 | 1.95 | 3.0 | 10 | 1.67 | 100 |
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