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600V High Speed Switching IGBT VBsemi Elec VBP16I40 with Low Turn Off Losses and Ultra Low Gate Charge

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The VBP16I40 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). This IGBT is ideal for telecommunications, lighting, consumer electronics, industrial equipment, and renewable energy sectors.

Product Attributes

  • Brand: VBsemi
  • Model: VBP16I40
  • Package: TO-247
  • Certifications: RoHS compliant, Halogen-free

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Collector-Emitter Voltage VCE VGE = 0 V, IC = 250 A 600 V
Gate-Emitter Threshold Voltage VGE(th) VCE = VGE, ID = 250 A 4 5 6 V
Zero Gate Voltage Collector Current ICES VCE = 600 V, VGE = 0 V, TJ = 25 C 1 20 A
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 40 A 1.8 V
Input Capacitance Cies VGE = 0 V, VCE = 25 V, f = 500 KHz 4600 pF
Output Capacitance Coes 186 pF
Reverse Transfer Capacitance Cres 148 pF
Total Gate Charge Qg IC = 40 A, VCE = 400 V, VGE = 20 V 36 nC
Diode Forward Current IF 40 A
Diode Forward Voltage VF IF = 40 A 2.1 V
Reverse Recovery Time trr TJ = 25 C, IF = 40 A, dIF/dt = 200 A/s, VR = 400 V 55 ns
Maximum Power Dissipation PD TC = 25 C 248 W
Maximum Junction Temperature TJ -55 175 C
Collector Current (TC=25) IC 80 A
Collector Current (TC=100) IC 40 A
Pulsed Collector Current ICM 120 A
Collector-Emitter Voltage (sat) VCE(sat) 1.8 V
Maximum Junction-to-Case Thermal Resistance RthJC 0.5 C/W

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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