Power switching trench mosfet XCH XCH3400 with excellent cdvdt effect and green product rating
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The XCH3400 is a high cell density trenched N-channel MOSFET designed for excellent RDS(on) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include a green device option, super low gate charge, and excellent Cdv/dt effect decline, achieved through advanced high cell density trench technology.
Product Attributes
- Brand: XCH
- Model: XCH3400
- Technology: Trench MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 5.8 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 4.2 | A | |||
| IDM | Pulsed Drain Current2 | 23.4 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 1 | 92 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | --- | /W | ||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250µA | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | - | - | 1.0 | µA |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±12V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250µA | 0.5 | 0.9 | 1.4 | V |
| RDS(on) | Static Drain-Source on-Resistancenote2 | VGS=10V, ID=4.2A | - | 23 | 28 | mΩ |
| VGS=4.5V, ID=4A | - | 27 | 34 | V | ||
| RDS(on) | Static Drain-Source on-Resistancenote2 | VGS=2.5V, ID=1A | - | 36 | 50 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | - | 602 | - | pF |
| Coss | Output Capacitance | - | 56 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 42 | - | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=4A, VGS=4.5V | - | 4.8 | - | nC |
| Qgs | Gate-Source Charge | - | 1.2 | - | nC | |
| Qgd | Gate-Drain (Miller) Charge | - | 1.7 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDS=15V, ID=4A, RGEN=3Ω, VGS =4.5V | - | 12 | - | ns |
| tr | Turn-on Rise Time | - | 52 | - | ns | |
| td(off) | Turn-off Delay Time | - | 17 | - | ns | |
| tf | Turn-off Fall Time | - | 10 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 6.0 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 23.2 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=5.8A | - | - | 1.2 | V |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina