N Channel Power MOSFET VISHAY SIR668ADP T1 RE3 100 Volt Drain Source Breakdown Voltage for Switching

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Product Description

SiR668ADP N-Channel 100 V (D-S) MOSFET

The SiR668ADP is a high-performance N-Channel Power MOSFET featuring TrenchFET Gen IV technology. It offers a very low RDS(on) x Qg figure-of-merit (FOM), optimized for the lowest RDS(on) x Qoss FOM. This MOSFET is 100% tested for Rg and UIS, making it suitable for demanding applications such as synchronous rectification, primary side switching, DC/DC converters, OR-ing, power supplies, motor drive control, and battery/load switching.

Product Attributes

Brand: Vishay Siliconix
Package: PowerPAK SO-8
Configuration: Single
Material: Lead (Pb)-free and halogen-free

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 A	100	-	-	V
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 A	2	-	4	V
Zero gate voltage drain current	IDSS	VDS = 100 V, VGS = 0 V	-	-	1	A
Drain-source on-state resistance	RDS(on)	VGS = 10 V, ID = 20 A	-	0.0040	0.0048
Drain-source on-state resistance	RDS(on)	VGS = 7.5 V, ID = 15 A	-	0.0054	0.0070
Total gate charge	Qg	VDS = 50 V, VGS = 10 V, ID = 10 A	-	54	81	nC
Total gate charge	Qg	VDS = 50 V, VGS = 7.5 V, ID = 10 A	-	42	63	nC
Continuous drain current	ID	TC = 25 C	-	-	93.6	A
Continuous drain current	ID	TC = 70 C	-	-	74.8	A
Pulsed drain current	IDM	(t = 100 s)	-	-	200	A
Single pulse avalanche current	IAS	L = 0.1 mH	-	-	35	A
Single pulse avalanche energy	EAS	-	-	-	61.2	mJ
Maximum power dissipation	PD	TC = 25 C	-	-	104	W
Maximum power dissipation	PD	TC = 70 C	-	-	66.6	W
Maximum junction-to-ambient thermal resistance	RthJA	t 10 s	-	15	20	C/W
Maximum junction-to-case (drain) thermal resistance	RthJC	Steady state	-	0.9	1.2	C/W
Operating junction and storage temperature range	TJ, Tstg	-	-55	-	+150	C
Soldering recommendations (peak temperature)	-	-	-	-	260	C