N Channel MOSFET XNRUSEMI XRS80N04HF Featuring Split Gate Trench Technology for Power Conversion
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Product Description
Product Overview
The XRS80N04HF is a high-performance N-Channel Fast Switching MOSFET featuring Split Gate Trench MOSFET technology. It offers excellent heat dissipation through its advanced package design and a high-density cell structure for low RDS(ON). This MOSFET is ideal for DC-DC converters, power management functions, and synchronous-rectification applications, providing efficient and reliable power control.
Product Attributes
- Brand: power-mos.com
- Technology: Split Gate Trench MOSFET
- Package: PDFN5060-8L
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=10A | --- | 3.6 | 4.5 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.4 | 3 | 3.6 | V |
| IDSS | Drain-Source Leakage Current | VDS=40V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=10V , ID=20A | --- | 27 | --- | nC |
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 1402 | --- | pF |
| Coss | Output Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 476 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 40 | --- | pF |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/ s , TJ=25 | --- | 23 | --- | nS |
| Qrr | Reverse Recovery Charge | IF=20A , di/dt=100A/ s , TJ=25 | --- | 20 | --- | nC |
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