P channel enhancement mode power mosfet XTX BRT30P35P1 designed for pwm and load switching applications
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Product Description
BRT30P35P1 P-channel Enhancement Mode Power MOSFET
The BRT30P35P1 is a P-channel enhancement mode power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management. It is lead-free and suitable for use in various electronic systems.
Product Attributes
- Brand: XTX Technology Inc.
- Product Number: BRT30P35P1
- Package: PDFN3.3*3.3-8L
- Marking: T30P35
- Origin: China (implied by Tel/Fax format)
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-to-Source Voltage | -30 | V | |||
| VGS | Gate-to-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | TC = 25C | -35 | A | ||
| ID | Continuous Drain Current | TC = 100C | -18 | A | ||
| IDM | Pulsed Drain Current (1) | -140 | A | |||
| EAS | Single Pulsed Avalanche Energy (2) | 85 | mJ | |||
| PD | Power Dissipation, TC = 25C | 40 | W | |||
| RJC | Thermal Resistance, Junction to Case | 3.13 | C/W | |||
| TJ, TSTG | Junction & Storage Temperature Range | -55 | +150 | C | ||
| Off Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | ID = -250A, VGS = 0V | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -30V, VGS = 0V | -1 | uA | ||
| IGSS | Gate-Body Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = -250uA | -1.0 | -1.7 | -2.5 | V |
| RDS(ON) | Static Drain-Source ON-Resistance(3) | VGS = -10V, ID = -12A | 7.6 | 9.2 | m | |
| RDS(ON) | Static Drain-Source ON-Resistance(3) | VGS = -4.5V, ID = -8A | 10.9 | 13.4 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = -15V, f = 1MHz | 2252 | pF | ||
| Coss | Output Capacitance | 306 | pF | |||
| Crss | Reverse Transfer Capacitance | 222 | pF | |||
| Qg | Total Gate Charge | VGS = 0 to -10V, VDS = -15V, ID = -10A | 41 | nC | ||
| Qgs | Gate Source Charge | 7 | nC | |||
| Qgd | Gate Drain("Miller") Charge | 10 | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGS = -10V, VDD = -15V, ID= -10A, RGEN = 3 | 6 | ns | ||
| tr | Turn-On Rise Time | 2 | ns | |||
| td(off) | Turn-Off Delay Time | 90 | ns | |||
| tf | Turn-Off Fall Time | 52 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Continuous Source Current | -35 | A | |||
| VSD | Forward on voltage | VGS = 0V, IS = -30A | -1.2 | V | ||
| Trr | Reverse Recovery Time | IF = -10A, di/dt = 100A/us | 15 | ns | ||
| Qrr | Reverse Recovery Charge | 6 | nC | |||
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