High Voltage N Channel MOSFET XYD X9N90DHA3 Designed for Cell Phone Chargers and LED Power Supplies
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The X9N90DHA3 is an N-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. Designed for high-voltage applications, it features low gate charge, low Ciss, and fast switching capabilities. This MOSFET is suitable for use in LED power supplies, cell phone chargers, and standby power systems.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: China
- Model: X9N90DHA3
- Package: TO-247-3L
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | VDSS | 900 | V | |
| VGS | -30 to 30 | V | ||
| ID | 9 | A | TC=25 | |
| IDM | 36 | A | ||
| EAS | 405 | mJ | L=10mH,VD=50V, TC=25 | |
| PD | 416 | W | TC=25 | |
| PD | 3.2 | W | TA=25 | |
| Tj,TSTG | -55 to 150 | |||
| Rth(J-c) | 0.31 | /W | ||
| Rth(J-a) | 39 | /W | ||
| Electrical Characteristics | BVDSS | 900 | V | VGS=0V,ID=250A |
| IDSS | 1 | A | VDS=900V,VGS=0V | |
| IGSSF | 100 | nA | VGS=30V,VDS=0V | |
| IGSSR | -100 | nA | VGS=-30V,VDS=0V | |
| VGS(th) | 2 to 4 | V | VDS=VGS,ID=250A | |
| RDS(on) | 1.2 | VGS=10V,ID=4.5A | ||
| Rg | 1 | VGS=0V, VDS=0V, f=1MHz | ||
| gfs | 10 | S | VDS=20V,ID=4.5A | |
| Ciss | 2900 | pF | VDS=25V,VGS=0V,f=1.0MHZ | |
| Dynamic Characteristics | Coss | 191 | pF | |
| Crss | 8 | pF | ||
| td(on) | 19 | ns | VDD=450V ,RG=4.7 ID=4A,VGS=10V | |
| Gate Charge Characteristics | tr | 7 | ns | |
| td(off) | 38 | ns | ||
| tf | 44 | ns | ||
| Qg | 61 | nC | VDS=450V,ID=9A,VGS=10V | |
| Reverse Diode | Qgs | 16 | nC | |
| Qgd | 13 | nC | ||
| IS | 9 | A | ||
| ISM | 36 | A | ||
| Diode Characteristics | VSD | 1.2 | V | IS=4.5A,VGS=0V |
| trr | 729 | ns | VGS=0V,Is=9A di/dt=100A/s | |
| Qrr | 7300 | nC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina