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High Voltage N Channel MOSFET XYD X9N90DHA3 Designed for Cell Phone Chargers and LED Power Supplies

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The X9N90DHA3 is an N-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. Designed for high-voltage applications, it features low gate charge, low Ciss, and fast switching capabilities. This MOSFET is suitable for use in LED power supplies, cell phone chargers, and standby power systems.

Product Attributes

  • Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
  • Origin: China
  • Model: X9N90DHA3
  • Package: TO-247-3L
  • Packaging: Tube

Technical Specifications

ParameterSymbolValuesUnitNote/Test Conditions
Absolute Maximum RatingsVDSS900V
VGS-30 to 30V
ID9ATC=25
IDM36A
EAS405mJL=10mH,VD=50V, TC=25
PD416WTC=25
PD3.2WTA=25
Tj,TSTG-55 to 150
Rth(J-c)0.31/W
Rth(J-a)39/W
Electrical CharacteristicsBVDSS900VVGS=0V,ID=250A
IDSS1AVDS=900V,VGS=0V
IGSSF100nAVGS=30V,VDS=0V
IGSSR-100nAVGS=-30V,VDS=0V
VGS(th)2 to 4VVDS=VGS,ID=250A
RDS(on)1.2VGS=10V,ID=4.5A
Rg1VGS=0V, VDS=0V, f=1MHz
gfs10SVDS=20V,ID=4.5A
Ciss2900pFVDS=25V,VGS=0V,f=1.0MHZ
Dynamic CharacteristicsCoss191pF
Crss8pF
td(on)19nsVDD=450V ,RG=4.7 ID=4A,VGS=10V
Gate Charge Characteristicstr7ns
td(off)38ns
tf44ns
Qg61nCVDS=450V,ID=9A,VGS=10V
Reverse DiodeQgs16nC
Qgd13nC
IS9A
ISM36A
Diode CharacteristicsVSD1.2VIS=4.5A,VGS=0V
trr729nsVGS=0V,Is=9A di/dt=100A/s
Qrr7300nC

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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