Phase Control Thyristor VISHAY VS-ST650C20L1 with Center Amplifying Gate and Ceramic Insulator Design

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Product Description

Product Overview

The Vishay Semiconductors VS-ST650C..L Series are Phase Control Thyristors featuring a center amplifying gate and a metal case with a ceramic insulator. Designed in the international standard B-PUK (TO-200AC) package, these thyristors are suitable for demanding applications such as DC motor control, controlled DC power supplies, and AC controllers. They offer robust performance with high current handling capabilities and a wide operating temperature range.

Product Attributes

Brand: Vishay Semiconductors
Case Style: B-PUK (TO-200AC)
Material Categorization: Defined at www.vishay.com/doc?99912

Technical Specifications

Parameter	Test Conditions	Values	Units
Average On-State Current (IT(AV))	Ths = 55 C	790	A
Repetitive Peak Off-State Voltage (VDRM/VRRM)		2000, 2200, 2400	V
On-State Voltage (VTM)	Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse	2.07	V
Gate Trigger Current (IGT)	TJ = 25 C	100 to 200	mA
Operating Temperature Range (TJ)		-40 to +125	C
RMS On-State Current (IT(RMS))	Ths = 25 C	1557	A
Peak Surge Current (ITSM)	50 Hz, t = 10 ms	10100	A
It for Fusing	50 Hz, t = 10 ms	510	kAs
Turn-off Time (tq)	Typical	200	s
Maximum Critical Rate of Rise of Off-State Voltage (dV/dt)	TJ = TJ maximum linear to 80 % rated VDRM	500	V/s
Maximum Operating Temperature (TJ)		125	C
Maximum Storage Temperature (TStg)		150	C
Thermal Resistance, Junction to Heatsink (RthJ-hs)	DC operation single side cooled	0.073	K/W
Thermal Resistance, Junction to Heatsink (RthJ-hs)	DC operation double side cooled	0.031	K/W
Mounting Force	10 %	14700 (1500)	N (kg)
Approximate Weight		255	g
Model Series	Voltage Code	VDRM/VRRM, Maximum Repetitive Peak and Off-State Voltage (V)	IDRM/IRRM Maximum at TJ = TJ Maximum (mA)
VS-ST650C..L	20	2000	80
VS-ST650C..L	22	2200
VS-ST650C..L	24	2400