PNP Power Transistor YANGJIE MJD32CQ with Halogen Free Construction and Moisture Sensitivity Level 1

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Product Description

Product Overview

The MJD32CQ is a PNP Power Transistor designed for general purpose amplifier and low speed switching applications. It features UL-94 V-0 flammability rating, halogen-free construction, and Moisture Sensitivity Level 1. The device is AEC-Q101 qualified.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Origin: China
Certifications: AEC-Q101 qualified, UL-94 V-0 flammability rating, RoHS compliant
Material: Epoxy

Technical Specifications

Item	Symbol	Unit	Conditions	Min	Typ	Max
Collector-Base Voltage	VCBO	V				-100
Collector-Emitter Voltage	VCEO	V				-100
Emitter-Base Voltage	VEBO	V				-5
Collector Current - Continuous	IC	A				-3
Total Device Dissipation	PD	W	Ta=25			1.25
Thermal Resistance, Junction to Ambient Air	RJA	/W	(*) Device mounted on FR-4 PCB 15 x 17 x 0.8 mm		100
Thermal Resistance, Junction to Mounting Base	RthJ-mb	/W			8.3
Junction Temperature	Tj			-55		+150
Storage Temperature	TSTG			-55		+150
Collector-base breakdown voltage	VCBO	V	IC= -1mA, IE=0	-100
Collector-emitter breakdown voltage	VCEO	V	IC= -30mA, IB=0	-100
Emitter-base breakdown voltage	VEBO	V	IE= -1mA, IC=0	-5
Collector-base cut-off current	ICEO	uA	VCE= -60V, IB =0			-50
Collector-base cut-off current	ICES	uA	VCE= -100V , VEB=0			-20
Emitter-base cut-off current	IEBO	mA	VEB= -5V , IC=0			-1
DC current gain	hFE		VCE= -4V, IC= -1A	25
DC current gain	hFE		VCE= -4V, IC= -3A	10		75
Collector-emitter saturation voltage	VCE(sat)	V	IC= -3A, IB= -0.375A			-1.2
Base-emitter voltage	VBE	V	IC= -3A, VCE= -4V		-1.8
Transition frequency	fT	MHz	VCE= 10V, IC= 0.5A, f=1KHz		3