High Current P Channel MOSFET XYD X4407IA for Portable Devices and Desktop PC Power Management
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The X4407IA is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability with low gate charge, making it suitable for switch and power management applications in portable and desktop PCs. This lead-free product is designed for efficient operation.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: China
- Product Code: X4407IA
- Package: SOP-8L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -30 | V | TA=25,unless otherwise noted | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Continuous Drain Current | ID | -9.5 | A | TA=25 | ||
| Continuous Drain Current | ID | -6 | A | TA=100 | ||
| Pulsed Drain Current | IDM | -38 | A | |||
| Maximum Power Dissipation | PD | 1.67 | W | TA=25 | ||
| Maximum Power Dissipation | PD | 0.67 | W | TA=100 | ||
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V,ID=-250A | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-30V,VGS=0V | ||
| Gate-Body Leakage Current,Forward | IGSSF | 100 | nA | VGS=20V,VDS=0V | ||
| Gate-Body Leakage Current,Reverse | IGSSR | -100 | nA | VGS=-20V,VDS=0V | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2 | V | VDS=VGS,ID=-250A | |
| Drain-Source On-State Resistance | RDS(on) | 9.7 | 11.6 | m | VGS=-10V,ID=-12A | |
| Drain-Source On-State Resistance | RDS(on) | 13 | 16.9 | m | VGS=-4.5V,ID=-7A | |
| Gate Resistance | Rg | 2.5 | VGS=0V, VDS =0V, f=1MHz | |||
| Forward Transconductance | gfs | 20 | S | VDS=-5V,ID=-7A | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | 1780 | pF | VDS=-15V,VGS=0V,f=1.0MHZ | ||
| Output Capacitance | Coss | 235 | pF | |||
| Reverse Transfer Capacitance | Crss | 200 | pF | |||
| Turn-On Delay Time | td(on) | 8 | ns | VDD=-15V,RG=3,VGS=-10V,RL=1 | ||
| Turn-On Rise Time | tr | 27 | ns | |||
| Turn-Off Delay Time | td(off) | 68 | ns | |||
| Turn-Off Fall Time | tf | 39 | ns | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | 36 | nC | VDS=-15V,ID=-15A,VGS=-10V | ||
| Gate-Source Charge | Qgs | 6.5 | nC | |||
| Gate-Drain Charge | Qgd | 8.5 | nC | |||
| Reverse Diode | ||||||
| Continuous Diode Forward Current | ISD | -9.5 | A | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-12A,VGS=0V | ||
| Reverse Recovery Time | trr | 13.5 | ns | VGS=0V,Is=-4Adi/dt=-100A/s | ||
| Reverse Recovery Charge | Qrr | 3.7 | nC | |||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Ambient | Rth(j-a) | 75 | /W | |||
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