Low gate charge P channel MOSFET XYD X409CVA designed for motor drive and synchronous rectification
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The X409CVA is a P-CHANNEL MOSFET featuring Trench Power MOSFET technology, offering low RDSON and low gate charge. It is RoHS and Halogen Free compliant and suitable for synchronous rectification, industrial, and motor drive applications.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Product Name: X409CVA
- Certifications: RoHS and Halogen Free Complaint
- Package: PDFN5*6-8L
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -60 | V | VGS=0V |
| Gate-Source Voltage | VGS | -20 to 20 | V | VDS=0V |
| Continuous Drain Current | ID | -40 (TC=25), -25 (TC=100) | A | Note 1 |
| Pulsed Drain Current | IDM | -80 | A | Note 2 |
| Avalanche Energy | EAS | 80 | mJ | L=0.1mH |
| Maximum Power Dissipation | PD | 62.5 (TC=25), 25 (TC=100) | W | |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 to 150 | ||
| Thermal Characteristics | ||||
| Thermal resistance, Junction to Case | Rth(J-c) | 1.1 (Typ) | /W | |
| Thermal resistance, Junction to Ambient | Rth(J-a) | 39 (Typ), 50 (Max) | /W | |
| Electrical Characteristics (Tj=25,unless otherwise noted) | ||||
| Static characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V,ID=-250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-60V,VGS=0V |
| Gate-Body Leakage Current,Forward | IGSSF | 100 | nA | VGS=20V,VDS=0V |
| Gate-Body Leakage Current,Reverse | IGSSR | -100 | nA | VGS=-20V,VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | -1.25 to -2.05 | V | VDS=VGS,ID=-250A |
| Drain-Source On-State Resistance | RDS(on) | 16.4 (Typ), 20.5 (Max) @VGS=-10V,ID=-20A; 18.3 (Typ), 23.5 (Max) @VGS=-4.5V,ID=-20A | m | |
| Gate resistance | Rg | 8.9 | VGS=0V, VDS=0V,f=1MHz | |
| Forward Transconductance | gfs | 61 | S | VDS=-5V,ID=-20A |
| Dynamic characteristics | ||||
| Input Capacitance | Ciss | 4967 | pF | VDS=-30V,VGS=0V,f=1.0MHZ |
| Output Capacitance | Coss | 234 | pF | |
| Reverse Transfer Capacitance | Crss | 178 | pF | |
| Turn-On Delay Time | td(on) | 12 | ns | VDD=-30V,RG=3,VGS=-10V,RL=1.5 |
| Turn-On Rise Time | tr | 61 | ns | |
| Turn-Off Delay Time | td(off) | 160 | ns | |
| Turn-Off Fall Time | tf | 137 | ns | |
| Gate charge characteristics | ||||
| Total Gate Charge | Qg | 98 | nC | VDS=-30V,ID=-20A,VGS=-10V |
| Gate-Source Charge | Qgs | 19 | nC | |
| Gate-Drain Charge | Qg d | 16 | nC | |
| Reverse diode | ||||
| Continuous Diode Forward Current | IS | -40 | A | |
| Diode Forward Voltage | VSD | -1 | V | IS=-1A,VGS=0V |
| Body Diode Reverse Recovery Time | trr | 37 | ns | VGS=0V,Is=-20A, dI/dt=-100A/s |
| Body Diode Reverse Recovery Charge | Qrr | 35 | nC | |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina