General purpose NPN transistor XZT SS8050 suitable for switching and amplification applications

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Product Description

SS8050 Transistor (NPN)

The SS8050 is an NPN transistor designed for general-purpose applications. It is complementary to the SS8550 transistor. With a collector current rating of 1.5A, it is suitable for various switching and amplification tasks.

Product Attributes

Brand: XT ELECTRONICS
Marking: Y1

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=40 V , IE=0			0.1	A
Collector cut-off current	ICEO	VCE=20V , I B=0			0.1	A
Emitter cut-off current	IEBO	VEB= 5V , IC=0			0.1	A
DC current gain (Rank L, J)	hFE(1)	VCE=1V, I C= 100mA	120		400
DC current gain (Rank H)	hFE(1)	VCE=1V, I C= 100mA	200		350
DC current gain (Rank L)	hFE(1)	VCE=1V, I C= 100mA	120		200
DC current gain (Rank J)	hFE(1)	VCE=1V, I C= 100mA	300		400
DC current gain	hFE(2)	VCE=1V, I C= 800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=800 mA, IB= 80mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800 mA, IB= 80mA			1.2	V
Transition frequency	fT	VCE=10V, IC= 50mA, f=30MHz		100		MHz

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	40	V
Collector-Emitter Voltage	VCEO	25	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	1500	mA
Collector Power Dissipation	PC	300	mW
Thermal Resistance (Junction to Ambient)	RJA	417	/W
Operation Junction and Storage Temperature Range	TJ,Tstg	-55+150