Dual NPN Digital Transistors YANGJIE UMH11NQ Featuring Built-in Resistors for Space Saving Solutions

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Product Description

UMH11NQ Dual NPN Digital Transistors (Built-in Resistors)

The UMH11NQ is a Dual NPN Digital Transistor featuring built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors. This configuration allows for inverter circuit setup and easy on/off condition setting, leading to reduced board space and component count. It is designed for controlling IC inputs, switching loads, and digital systems.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Part Number: UMH11NQ
Package: SOT-363
Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
Marking: H11
Certifications: Epoxy meets UL-94 V-0 flammability rating, Moisture Sensitivity Level 1, AEC-Q101 qualified (for part no. with suffix Q)
Compliance: RoHS COMPLIANT

Technical Specifications

Item	Symbol	Unit	Conditions	Min	Typ	Max
Collector-Emitter Voltage	VCEO	V				50
Collector-Base Voltage	VCBO	V				50
Emitter-Base Voltage	VEBO	V				10
Supply Voltage	VCC	V				50
Input Voltage	VIN	V		-10		+40
Collector Current	IC	mA				100
Power Dissipation	PD	mW	(*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch			150
Junction Temperature	Tj			-55		+150
Storage Temperature	TSTG			-55		+150
Input voltage (off)	VI(off)	V	VCC=5V, IO=100uA	0.5		-
Input voltage (on)	VI(on)	V	VO=0.3V, IO=10mA	-		3
Output voltage (on)	Vo(on)	V	Io=10mA, II=0.5 mA	-		0.3
Input current	II	mA	VI=5V	-		0.88
Output current (off)	IO(off)	uA	VCC=50V, VI=0	-		0.5
DC current gain	GI		VO=5V, IO=5mA	30	-	-
Input resistance	R1	k		7	10	13
Resistance ratio	R2/R1			0.8	1	1.2
Transition frequency	fT	MHz	VCE=10V, IC=5mA, f=100MHz	-	250	-