Triac Semiconductor Device WEIDA BTB16-800CW with 16A RMS On State Current and 800V Voltage Rating
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Product Description
Product Overview
The BTA16/BTB16 series 16A Triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high current shock loading and offer a high dv/dt rate with strong resistance to electromagnetic interference. These triacs feature excellent commutation performance, making them particularly suitable for inductive loads, especially in their 3-quadrant variants. The BTA16 series provides a rated insulation voltage of 2500 VRMS, compliant with UL standards (File ref: E516503), from all three terminals to an external heatsink.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Series: BTA16/BTB16
- Certifications: UL (File ref: E516503)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Repetitive peak off-state voltage / reverse voltage | VDRM/VRRM | 600 | V | (Tj=25) |
| 800 | ||||
| 1200 | ||||
| RMS on-state current | IT(RMS) | 16 | A | |
| Non repetitive surge peak on-state current | ITSM | 160 | A | (full cycle, F=50Hz) |
| I2t value for fusing | I2t | 128 | A2s | (tp=10ms) |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | (IG=2IGT) |
| Peak gate current | IGM | 4 | A | |
| Average gate power dissipation | PG(AV) | 1 | W | |
| Peak gate power | PGM | 5 | W | |
| Storage junction temperature range | Tstg | -40~150 | ||
| Operating junction temperature range | Tj | -40~125 | ||
| RMS on-state current | IT(RMS) | 16 | A | (See Fig.2 for current vs. case temperature) |
| Maximum power dissipation | P(max) | - | W | (See Fig.1 for power dissipation vs. RMS on-state current) |
| Gate Trigger Current (IGT) | Quadrant I, II, III | MAX 5 | mA | (TW, VD=12V, RL=33) |
| Quadrant I, II, III | MAX 10 | mA | (SW, VD=12V, RL=33) | |
| Quadrant I, II, III | MAX 35 | mA | (CW, VD=12V, RL=33) | |
| Gate Trigger Current (IGT) | Quadrant I, II, III | MAX 50 | mA | (BW, VD=12V, RL=33) |
| Quadrant I, II, III | MAX 25 | mA | (C, VD=12V, RL=33) | |
| Quadrant IV | MAX 50 | mA | (C, VD=12V, RL=33) | |
| Gate Trigger Current (IGT) | Quadrant I, II, III | MAX 25 | mA | (B, VD=12V, RL=33) |
| Quadrant IV | MAX 50 | mA | (B, VD=12V, RL=33) | |
| Gate Trigger Voltage | VGT | 1.5 | V | |
| Gate Voltage Threshold | VGD | MIN 0.2 | V | (VD=VDRM) |
| Holding Current | Quadrant I, III | MAX 15 | mA | (IT=100mA, TW) |
| Quadrant I, III | MAX 25 | mA | (IT=100mA, SW) | |
| Holding Current | Quadrant I, III | MAX 40 | mA | (IT=100mA, CW) |
| Quadrant I, III | MAX 50 | mA | (IT=100mA, BW) | |
| Holding Current | Quadrant I, III | MAX 50 | mA | (IT=100mA, C) |
| Quadrant II | MAX 25 | mA | (IT=100mA, C) | |
| Holding Current | Quadrant I, III | MAX 40 | mA | (IT=100mA, B) |
| Quadrant II | MAX 70 | mA | (IT=100mA, B) | |
| Latching Current | Quadrant I, III | MAX 20 | mA | (IG=1.2IGT, TW) |
| Quadrant I, III | MAX 30 | mA | (IG=1.2IGT, SW) | |
| Latching Current | Quadrant I, III | MAX 50 | mA | (IG=1.2IGT, CW) |
| Quadrant I, III | MAX 70 | mA | (IG=1.2IGT, BW) | |
| Latching Current | Quadrant I, III | MAX 50 | mA | (IG=1.2IGT, C) |
| Quadrant II | MAX 70 | mA | (IG=1.2IGT, C) | |
| Latching Current | Quadrant I, III | MAX 50 | mA | (IG=1.2IGT, B) |
| Quadrant II | MAX 70 | mA | (IG=1.2IGT, B) | |
| Critical rate of rise of off-state voltage | dV/dt | MIN 100 | V/s | (Gate open, VD=2/3VDRM, Tj=125) |
| MIN 200 | ||||
| MIN 500 | ||||
| Critical rate of rise of off-state voltage | dV/dt | MIN 200 | V/s | (Gate open, VD=2/3VDRM, Tj=125) |
| MIN 500 | ||||
| On-state voltage | VTM | 1.5 | V | (ITM=22.5A, tp=380s, Tj=25) |
| Off-state current | IDRM/IRRM | MAX 5 | A | (VDRM=VRRM, Tj=25) |
| 1 | (Tj=125) | |||
| Thermal resistance (junction to case) | Rth(j-c) | 2.1 | /W | (AC, TO-220A(Ins)) |
| 1.3 | (TO-220B(Non-Ins)) | |||
| 2.3 | (TO-220F(Ins)) | |||
| 2.4 | (TO-263) |
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