Triac WEIDA BT138-800CW optimized for 12A RMS current and 800V peak voltage in resistive load circuits

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Product Description

Jiangsu Weida Semiconductor BT138 Series 12A Triacs

The BT138 Series Triacs from Jiangsu Weida Semiconductor are designed for middle and small resistance type power loads, featuring low holding and latching current. These triacs are ideal for applications requiring reliable power control in resistive load scenarios.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Product Series: BT138 Series
Current Rating: 12A
Revision: 9.0
Year: 2020

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
MAIN FEATURES
RMS on-state current	IT(RMS)	12	A
Repetitive peak off-state voltage / Repetitive peak reverse voltage	VDRM/VRRM	600/800	V
On-state voltage	VTM	≤1.6	V
ABSOLUTE MAXIMUM RATINGS
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25℃)	VDRM	600/800	V
Repetitive peak reverse voltage (Tj=25℃)	VRRM	600/800	V
RMS on-state current	IT(RMS)	12	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	120	A
I2t value for fusing (tp=10ms)	I2t	45	A²s
Critical rate of rise of on-state current (IG=2×IGT)	dI/dt	50 (--) / 10 ()	A/µs
Peak gate current	IGM	2	A
Average gate power dissipation	PG(AV)	0.5	W
Peak gate power	PGM	5	W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Gate Trigger Current (3 Quadrants)	IGT	MAX 10/35/50	mA	VD=12V, RL=33Ω (--)
Gate Trigger Voltage (3 Quadrants)	VGT	1.3	V
Gate Non-Trigger Voltage (3 Quadrants)	VGD	MIN 0.2	V	VD=VDRM, Tj=125℃ (--)
Holding Current (3 Quadrants)	IH	MAX 10/40/60	mA	IT=100mA (-)
Latching Current (3 Quadrants)	IL	MAX 30/50/70 (-), 40/60/80 ()	mA	IG=1.2IGT
Critical dV/dt (3 Quadrants)	dV/dt	MIN 200/500/1000	V/µs	VD=2/3VDRM, Tj=125℃, Gate open
Gate Trigger Current (4 Quadrants)	IGT	MAX 5/10/25/50 (--), 10/25/70/100 ()	mA	VD=12V, RL=33Ω
Gate Trigger Voltage (4 Quadrants)	VGT	1.3	V	(---)
Gate Non-Trigger Voltage (4 Quadrants)	VGD	MIN 0.2	V	VD=VDRM (---)
Holding Current (4 Quadrants)	IH	MAX 10/20/40/60	mA	IT=100mA
Latching Current (4 Quadrants)	IL	MAX 10/30/50/70 (--), 20/40/70/100 ()	mA	IG=1.2IGT
Critical dV/dt (4 Quadrants)	dV/dt	MIN 20/50/100/200	V/µs	VD=0.66×VDRM, Tj=125℃, Gate open
STATIC CHARACTERISTICS
On-state voltage	VTM	MAX 1.6	V	ITM=15A, tp=380µs, Tj=25℃
Off-state current	IDRM, IRRM	MAX 5 (Tj=25℃), 1 (Tj=125℃)	µA / mA	VDRM= VRRM
THERMAL RESISTANCES
Junction to case (AC)	Rth(j-c)	1.8 (TO-252-4R) / 1.5 (TO-220B/C) / 2.5 (TO-220F) / 1.5 (TO-263)	℃/W