12 Amp Triac WEIDA BT138-800E with Robust Performance and 800 Volt Repetitive Peak Off State Voltage

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Product Description

Product Overview

The BT138 Series 12A Triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for middle and small resistance type power loads, featuring low holding and latching current. This series offers robust performance with high repetitive peak off-state voltages and RMS on-state current capabilities.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Product Series: BT138 Series
Product Type: Triacs
Current Rating: 12A
Revision: 9.0
Year: 2020

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings	Storage junction temperature range	-40~150
	Operating junction temperature range	Tj	-40~125
	Repetitive peak off-state voltage (Tj=25)	VDRM	600/800	V
	Repetitive peak reverse voltage (Tj=25)	VRRM	600/800	V
	RMS on-state current	IT(RMS)	12	A
	Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	120	A
	I2t value for fusing (tp=10ms)	I2t	45	A2s
	Critical rate of rise of on-state current (IG=2IGT)	dI/dt	50 (--), 10 ()	A/s
	Peak gate current	IGM	2	A
	Average gate power dissipation	PG(AV)	0.5	W
Electrical Characteristics (Tj=25 unless otherwise specified)	Gate Trigger Current (3 Quadrants)	IGT	MAX 10/35/50 (--)	mA	VD=12V, RL=33
	Gate Trigger Voltage (3 Quadrants)	VGT	1.3	V	VD=12V, RL=33
	Gate Non-Trigger Voltage (3 Quadrants)	VGD	MIN 0.2	V	VD=VDRM, Tj=125
	Holding Current (3 Quadrants)	IH	MAX 10/40/60 (--)	mA	IT=100mA
	Latching Current (3 Quadrants)	IL	MAX 30/50/70 (-), 40/60/80 ()	mA	IG=1.2IGT
	Critical rate of rise of commutating voltage (Gate open) (3 Quadrants)	dV/dt	MIN 200/500/1000	V/s	VD=2/3VDRM, Tj=125
	Gate Trigger Current (4 Quadrants)	IGT	MAX 5/10/25/50 (--), 10/25/70/100 ()	mA	VD=12V, RL=33
	Gate Trigger Voltage (4 Quadrants)	VGT	1.3	V	---
	Gate Non-Trigger Voltage (4 Quadrants)	VGD	MIN 0.2	V	VD=VDRM
	Holding Current (4 Quadrants)	IH	MAX 10/20/40/60 (-), 20/40/70/100 ()	mA	IT=100mA
	Critical rate of rise of commutating voltage (Gate open) (4 Quadrants)	dV/dt	MIN 20/50/100/200	V/s	VD=0.66VDRM, Tj=125
	On-state voltage	VTM	MAX 1.6	V	ITM=15A, tp=380s, Tj=25
Static Characteristics	Off-state current	IDRM, IRRM	MAX 5 (Tj=25), 1 (Tj=125)	A	VDRM= VRRM
Static Characteristics	Peak gate power dissipation	PGM	5	W
Thermal Resistances	Junction to case (AC)	Rth(j-c)	1.8	/W	TO-252-4R
	Junction to case (AC)	Rth(j-c)	1.5	/W	TO-220B(Non-Ins)/ TO-220C
	Junction to case (AC)	Rth(j-c)	2.5	/W	TO-220F
	Junction to case (AC)	Rth(j-c)	1.5	/W	TO-263