High Voltage NPN Silicon Transistor YANGJIE MMSTA42Q with Moisture Sensitivity Level 1 and RoHS Compliance
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Product Description
Product Overview
The MMSTA42Q is an NPN Silicon High Voltage Transistor designed for general purpose switching and linear amplification. It features a high conductance, high breakdown voltage, and is housed in a surface mount SOT-323 package ideally suited for automatic insertion. The epoxy meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. The AEC-Q101 qualified part is designed for automotive electronics applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Material: Silicon
- Certifications: RoHS, AEC-Q101 Qualified
- Flammability Rating: UL-94 V-0
- Moisture Sensitivity Level: 1
- Package: SOT-323
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Marking: K3M
Technical Specifications
| Item | Symbol | Unit | Conditions | Value |
| Collector-Base Voltage | VCBO | V | 300 | |
| Collector-Emitter Voltage | VCEO | V | 300 | |
| Emitter-Base Voltage | VEBO | V | 5 | |
| Collector Current | IC | mA | 100 | |
| Collector Power Dissipation (*) | Pc | mW | Ta=25 | 200 |
| Thermal Resistance Junction to Ambient (*) | RthJA | K/W | 625 | |
| Operation Junction Temperature | Tj | -55 to +150 | ||
| Storage Temperature | Tstg | -55 to +150 | ||
| Collector-base breakdown voltage | VCBO | V | IC=100uA,IE=0 | 300 |
| Collector-emitter breakdown voltage | VCEO | V | IC=1mA, IB=0 | 300 |
| Emitter-base breakdown voltage | VEBO | V | IE=100uA, IC=0 | 5 |
| Collector-base cut-off current | ICBO | uA | VCB=200V, IE=0 | 0.5 |
| Emitter-base cut-off current | IEBO | uA | VEB=5V , IC=0 | 0.5 |
| DC current gain | hFE | VCE=10V, IC= 1mA | 25 | |
| VCE=10V, IC=10mA | 40 | |||
| VCE=10V, IC=30mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=20mA, IB= 2mA | 0.5 |
| Base-emitter saturation voltage | VBE(sat) | V | IC=20mA, IB= 2mA | 1.0 |
| Transition frequency | Ft | MHz | VCE=20V,IC=10mA,f=30MHz | 50 |
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