Low saturation voltage PNP bipolar transistor WILLSEMI WPT2E33-3TR for charging circuit applications

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Product Description

Product Overview

The WPT2E33 is a single PNP bipolar power transistor from Will Semiconductor Ltd. It features a very low saturation voltage and is suitable for charging circuits and other power management applications in portable equipment. This device is Pb-free.

Product Attributes

Brand: Will Semiconductor Ltd.
Product Code: WPT2E33
Certification: Pb-free
Package: SOT-89-3L
Marking: WPT2E33 YYWW (YY=Year, WW=Week)

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Collector-emitter voltage	VCEO				-30	V
Collector-base voltage	VCBO				-30	V
Emitter-base voltage	VEBO				-6	V
Continues collector current (a)	IC				-3	A
Continues collector current (b)	IC				-2	A
Pulse collector current (c)	ICM				-6	A
Power dissipation (a)	PD				3.0	W
Power dissipation (b)	PD				1.5	W
Junction Temperature	TJ				150	C
Lead Temperature	TL				260	C
Storage Temperature Range	Tstg		-55		155	C
Collector-emitter breakdown voltage	BVCEO	IC=-10mA, IB=0mA	-30			V
Collector-base breakdown voltage	BVCBO	IC=-1mA, IE=0mA	-30			V
Emitter-base breakdown voltage	BVEBO	IE=-100uA, IC=0mA	-6			V
Collector cutoff current	ICBO	VCB=-30V			-100	nA
Emitter cutoff current	IEBO	VEB=-5V			-100	nA
Collector-emitter saturation voltage (c)	VCE(sat)	IC=-2A, IB=-200mA		-0.2	-0.4	V
Base-emitter saturation voltage (c)	VBE(sat)	IC=-2A, IB=-200mA		-1.0	-1.5	V
Base-emitter forward voltage	VBE(on)	IC=-0.5A, VCE=-2V		-0.7	-1.0	V
DC current gain (c)	hFE	IC=-1A , VCE=-2V	100		300