Silicon Carbide Schottky Barrier Diode Wolfspeed E4D02120E 1200 Volt 2 Amp for Industrial Electronics
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The Wolfspeed E4D02120E is a 1200 V, 2 A Silicon Carbide (SiC) Schottky Barrier Diode designed to enhance the performance of power electronics systems. Leveraging SiC technology, it offers higher efficiency, faster switching frequencies, and improved power density compared to silicon-based solutions. These diodes are easily paralleled without concern for thermal runaway, and their reduced cooling requirements and superior thermal performance contribute to lower overall system costs. Key applications include bootstrap diodes, boost diodes in PFC circuits, automotive power conversion, PV inverters, and outdoor power conversion.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide (SiC)
- Certifications: AEC-Q101, HV-H3TRB qualified, PPAP capable
- Package Type: TO-252-2
- RoHS Compliance: Compliant with EU Directive 2011/65/EC (RoHS2)
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | DC Blocking Voltage | |
| Continuous Forward Current | IF | 8 | A | TC = 25 C | Fig. 3 |
| 2 | A | TC = 135 C | |||
| 2 | A | TC = 160 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 11 | A | TC = 25 C, tP = 10 ms, Half Sine Wave | |
| 7 | A | TC = 110 C, tP = 10 ms, Half Sine Wave | |||
| Power Dissipation | Ptot | 50 | W | TC = 25 C | Fig. 4 |
| 21 | W | TC = 110 C | |||
| Forward Voltage | VF | 1.4 | V | IF = 2 A, TJ = 25 C | Fig. 1 |
| 1.8 | V | IF = 2 A, TJ = 25 C | |||
| 1.9 | V | IF = 2 A, TJ = 175 C | |||
| Reverse Current | IR | 10 | A | VR = 1200 V, TJ = 25 C | Fig. 2 |
| 50 | A | VR = 1200 V, TJ = 25 C | |||
| 40 | A | VR = 1200 V, TJ = 175 C | |||
| Total Capacitive Charge | QC | 16 | nC | VR = 800 V, TJ = 25 C | Fig. 5 |
| Total Capacitance | C | 153 | pF | VR = 0 V, TJ = 25 C, f = 1 MHz | Fig. 6 |
| 17 | pF | VR = 400 V, TJ = 25 C, f = 1 MHz | |||
| 14 | pF | VR = 800 V, TJ = 25 C, f = 1 MHz | |||
| Capacitance Stored Energy | EC | 5.6 | J | VR = 800 V | Fig. 7 |
| Thermal Resistance, Junction to Case (Typ.) | R, JC | 2.99 | C/W | ||
| Operating Junction & Storage Temperature | TJ, Tstg | -55 to +175 | C | Fig. 8 | |
| Moisture Sensitivity Level | MSL | 3 | |||
| Electrostatic Discharge (ESD) Human Body Model | HBM | Class 3B ( 8000 V) | |||
| Electrostatic Discharge (ESD) Charge Device Model | CDM | Class C3 ( 1000 V) |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina