N Channel MOSFET YANGJIE YJG40G10B Featuring Low RDS ON High Density Cell and Halogen Free Materials
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Product Description
Product Overview
The YJG40G10B is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, offering low RDS(ON) due to its high-density cell design and excellent heat dissipation through its package. This transistor is suitable for power switching applications, uninterruptible power supplies, and DC-DC converters. It is 100% EAS and VDS tested, with a Moisture Sensitivity Level 1 and meets UL 94 V-0 flammability rating. It is also Halogen Free.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJG40G10B
- Origin: China (implied by manufacturer location)
- Certifications: UL 94 V-0 Flammability Rating, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25 | 7 | A | ||
| Drain Current | ID | TA=100 | 4.5 | A | ||
| Drain Current | ID | TC=25 | 40 | A | ||
| Drain Current | ID | TC=100 | 25 | A | ||
| Pulsed Drain Current | IDM | 100 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=50V, VG=10V, RG=25, L=1mH, IAS=13A | 84 | mJ | ||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | ||
| Total Power Dissipation | PD | TA=100 | 1 | W | ||
| Total Power Dissipation | PD | TC=25 | 70 | W | ||
| Total Power Dissipation | PD | TC=100 | 28 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal resistance | ||||||
| Thermal Resistance Junction-to-Ambient Steady-State | RJA | 40 | 50 | /W | ||
| Thermal Resistance Junction-to-Case Steady-State | RJC | 1.5 | 1.8 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V, Tj=150 | 100 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 2 | 2.8 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 16 | 21 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=6V, ID=20A | 19 | 25 | mΩ | |
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 0.9 | 1.2 | V | |
| Gate resistance | RG | f=1MHz | 1.4 | Ω | ||
| Maximum Body-Diode Continuous Current | IS | 40 | A | |||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | 1200 | pF | ||
| Output Capacitance | Coss | 350 | pF | |||
| Reverse Transfer Capacitance | Crss | 11 | pF | |||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=20A | 32 | nC | ||
| Gate-Source Charge | Qgs | 11 | nC | |||
| Gate-Drain Charge | Qg d | 5 | nC | |||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | 84 | nC | ||
| Reverse Recovery Time | trr | 52 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=50V, ID=20A RGEN=2.2Ω | 51 | ns | ||
| Turn-on Rise Time | tr | 14 | ns | |||
| Turn-off Delay Time | tD(off) | 69 | ns | |||
| Turn-off fall Time | tf | 21 | ns | |||
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