Power Switching N Channel Enhancement Mode Field Effect Transistor YANGJIE YJG2D7G06A with Low RDS
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Product Description
Yangjie YJG2D7G06A N-Channel Enhancement Mode Field Effect Transistor
The YJG2D7G06A is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, an excellent package for heat dissipation, and a high-density cell design for low RDS(ON). This transistor is designed for power switching applications, uninterruptible power supplies, and DC-DC converters. It meets Moisture Sensitivity Level 1 and its epoxy meets UL 94 V-0 flammability rating. It is also Halogen Free.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25 | 19 | A | ||
| Drain Current | ID | TA=100 | 12 | A | ||
| Drain Current | ID | TC=25 | 120 | A | ||
| Drain Current | ID | TC=100 | 75 | A | ||
| Pulsed Drain Current | IDM | 480 | A | |||
| Avalanche energy | EAS | TJ=25, VG=10V, RG=25, L=2mH, IAS=19A | 361 | mJ | ||
| Total Power Dissipation | PD | TA=25 | 2.2 | W | ||
| Total Power Dissipation | PD | TA=100 | 0.9 | W | ||
| Total Power Dissipation | PD | TC=25 | 78 | W | ||
| Total Power Dissipation | PD | TC=100 | 31 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal resistance | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 45 | 55 | /W | |
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 1.3 | 1.6 | /W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=1mA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V, Tj=150 | 100 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 1.3 | 1.8 | 2.3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=50A | 2.1 | 2.7 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=30A | 3 | 4.1 | mΩ | |
| Diode Forward Voltage | VSD | IS=50A, VGS=0V | 1.2 | V | ||
| Gate resistance | RG | f=1MHz | 2 | Ω | ||
| Maximum Body-Diode Continuous Current | IS | 120 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | 3500 | pF | ||
| Output Capacitance | Coss | 1345 | pF | |||
| Reverse Transfer Capacitance | Crss | 54 | pF | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=50A | 49 | nC | ||
| Gate-Source Charge | Qgs | 8.6 | ||||
| Gate-Drain Charge | Qg d | 9.7 | ||||
| Reverse Recovery Charge | Qrr | IF=50A, di/dt=100A/us | 40 | nC | ||
| Reverse Recovery Time | trr | 46 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=30V, ID=50A RGEN=3 | 12 | ns | ||
| Turn-on Rise Time | tr | 9.5 | ||||
| Turn-off Delay Time | tD(off) | 40 | ||||
| Turn-off fall Time | tf | 17 | ||||
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