Trench Power LV MOSFET N Channel Transistor YANGJIE YJL3134KAT Suitable for Load Switching and PWM Circuits
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The YJL3134KAT is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers high power and current handling capabilities, making it suitable for PWM applications and load switching. This ESD protected device can withstand up to 2.0KV (HBM).
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 20 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V, Tj=150 | - | - | 100 | A |
| Gate-Body Leakage Current | IGSS | VGS= 10V, VDS=0V | - | 2 | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 0.35 | 0.75 | 1.1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=0.5A | - | 200 | 300 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=0.4A | - | 290 | 400 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=1.8V, ID=0.2A | - | 480 | 700 | m |
| Diode Forward Voltage | VSD | IS=0.5A, VGS=0V | - | 0.9 | 1.2 | V |
| Gate resistance | RG | f=1MHz, Open drain | - | 50 | - | |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 0.5 | A |
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | - | 56 | - | pF |
| Output Capacitance | Coss | - | - | 20 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 2.5 | - | pF |
| Total Gate Charge | Qg | VGS=4.5V, VDS=10V, ID=0.5A | - | 1 | - | nC |
| Gate-Source Charge | Qgs | - | - | 0.28 | - | - |
| Gate-Drain Charge | Qg d | - | - | 0.22 | - | - |
| Reverse Recovery Charge | Qrr | IF=0.5A, di/dt=20A/us | - | 0.4 | - | nC |
| Reverse Recovery Time | trr | - | - | 14.4 | - | ns |
| Turn-on Delay Time | tD(on) | VGS=4.5V, VDD=10V, ID=0.5A RGEN=10 | - | 2 | - | nS |
| Turn-on Rise Time | tr | - | - | 18.8 | - | - |
| Turn-off Delay Time | tD(off) | - | - | 10 | - | - |
| Turn-off fall Time | tf | - | - | 23 | - | - |
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