Silicon Carbide Schottky Diode Wolfspeed C4D05120E 1200 Volt 5 Amp Fast Switching for Power Supplies
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Product Description
Product Overview
The Wolfspeed C4D05120E is a 1200 V, 5 A Silicon Carbide Schottky Diode designed for high-frequency operation. It offers zero reverse recovery current, temperature-independent switching behavior, and extremely fast switching. Key benefits include higher efficiency, reduction of heatsink requirements, and the ability to replace bipolar with unipolar rectifiers without thermal runaway when paralleled. This diode is suitable for switch mode power supplies (SMPS), boost diodes in PFC or DC/DC stages, freewheeling diodes in inverter stages, LED lighting power supplies, and AC/DC converters.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide (SiC)
- Package Type: TO-252-2
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | ||
| Surge Peak Reverse Voltage | VRSM | 1300 | V | ||
| DC Blocking Voltage | VDC | 1200 | V | ||
| Continuous Forward Current | IF | 19 | A | TC = 25 C | Fig. 3 |
| 9.5 | A | TC = 135 C | |||
| 5 | A | TC = 161 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 26 | TC = 25 C, tP = 10 ms, Half Sine Pulse | ||
| 18 | TC = 110 C, tP = 10 ms, Half Sine Pulse | ||||
| Non-Repetitive Peak Forward Surge Current | IFSM | 46 | TC = 25 C, tP = 10 ms, Half Sine Pulse | Fig. 8 | |
| 36 | TC = 110 C, tP = 10 ms, Half Sine Pulse | ||||
| Non-Repetitive Peak Forward Current | IF, Max | 400 | TC = 25 C, tP = 10 s, Pulse | Fig. 8 | |
| 320 | TC = 110 C, tP = 10 s, Pulse | ||||
| Power Dissipation | Ptot | 100 | W | TC = 25 C | Fig. 4 |
| 43 | TC = 110 C | ||||
| Diode dV/dt Ruggedness | dV/dt | 200 | V/ns | VR = 0-960 V | |
| i2t Value | i2dt | 10.6 | A2s | TC = 25 C, tP = 10 ms | |
| 6.5 | TC = 110 C, tP = 10 ms | ||||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | C | ||
| Forward Voltage | VF | 1.4 (Typ.) | V | IF = 5 A, TJ = 25 C | Fig. 1 |
| 1.8 (Max.) | V | IF = 5 A, TJ = 25 C | |||
| 1.9 (Typ.) | V | IF = 5 A, TJ = 175 C | |||
| 3 (Max.) | V | IF = 5 A, TJ = 175 C | |||
| Reverse Current | IR | 20 (Typ.) | A | VR = 1200 V, TJ = 25 C | Fig. 2 |
| 150 (Max.) | A | VR = 1200 V, TJ = 25 C | |||
| 40 (Typ.) | A | VR = 1200 V, TJ = 175 C | |||
| 300 (Max.) | A | VR = 1200 V, TJ = 175 C | |||
| Total Capacitive Charge | QC | 27 | nC | VR = 800 V, IF = 5 A, di/dt = 200 A/S, TJ = 25 C | Fig. 5 |
| Total Capacitance | C | 390 | pF | VR = 0 V, TJ = 25 C, f = 1 MHz | Fig. 6 |
| 27 | pF | VR = 400 V, TJ = 25 C, f = 1 MHz | |||
| 20 | pF | VR = 800 V, TJ = 25 C, f = 1 MHz | |||
| Capacitance Stored Energy | EC | 8.0 | J | VR = 800 V | Fig. 7 |
| Thermal Resistance from Junction to Case | RJC | 1.5 | C/W | Fig. 9 |
Product Models & Packages
| Part Number | Package | Marking |
|---|---|---|
| C4D05120E | TO-252-2 | C4D05120 |
| C4D05120 | TO-252-2 | C4D05120E |
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