Low RDS ON P Channel MOSFET YANGJIE YJG55P03B for Load Switching and Battery Protection Applications
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Product Description
Product Overview
The YJG55P03B is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Trench Power LV MOSFET technology with a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This transistor is suitable for applications such as battery protection, power management, and load switching. It is designed for reliability, meeting Moisture Sensitivity Level 1 and UL 94 V-0 flammability rating.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China (implied by company location)
- Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
- Material: Epoxy (for encapsulation)
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |
| Absolute Maximum Ratings | |||||||
| Drain-source Voltage | VDS | -30 | V | ||||
| Gate-source Voltage | VGS | ±25 | V | ||||
| Drain Current | ID | TA=25 | -10 | A | |||
| Drain Current | ID | TA=100 | -6.3 | A | |||
| Drain Current | ID | TC=25 | -55 | A | |||
| Drain Current | ID | TC =100 | -35 | A | |||
| Pulsed Drain Current | IDM | -150 | A | ||||
| Avalanche energy | EAS | TJ=25, VDD=-25V, VG=-10V, RG=25, L=0.5mH, IAS=-20A | 100 | mJ | |||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | |||
| Total Power Dissipation | PD | TA=100 | 1 | W | |||
| Total Power Dissipation | PD | TC=25 | 62 | W | |||
| Total Power Dissipation | PD | TC =100 | 25 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ||||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -30 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | μA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V, Tj=150 | -100 | μA | |||
| Gate-Body Leakage Current | IGSS | VGS= ±25V, VDS=0V | ±100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -1.2 | -1.8 | -2.8 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-20V, ID=-20A | 7.2 | 9 | mΩ | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-15A | 8.2 | 10.5 | mΩ | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-6V, ID=-12A | 10.4 | 14 | mΩ | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-10A | 14.0 | 20 | mΩ | ||
| Diode Forward Voltage | VSD | IS=-20A, VGS=0V | -0.9 | -1.2 | V | ||
| Gate resistance | RG | f=1MHz | 17 | Ω | |||
| Maximum Body-Diode Continuous Current | IS | -55 | A | ||||
| Dynamic Parameters | |||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 1860 | pF | |||
| Output Capacitance | Coss | 310 | pF | ||||
| Reverse Transfer Capacitance | Crss | 280 | pF | ||||
| Switching Parameters | |||||||
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, ID=-20A | 38 | nC | |||
| Gate-Source Charge | Qgs | 6 | nC | ||||
| Gate-Drain Charge | Qg | 10 | nC | ||||
| Reverse Recovery Charge | Qrr | IF=-20A, di/dt=100A/us | 22 | nC | |||
| Reverse Recovery Time | trr | 43 | ns | ||||
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-15V, ID=-20A RGEN=2.3 | 8 | ns | |||
| Turn-on Rise Time | tr | 6 | ns | ||||
| Turn-off Delay Time | tD(off) | 108 | ns | ||||
| Turn-off fall Time | tf | 69 | ns | ||||
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