High Current N Channel MOSFET YANGJIE YJG40G10AQ with Excellent Thermal and Electrical Properties
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Product Description
Product Overview
The YJG40G10AQ is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor is designed for power switching applications, uninterruptible power supplies, and DC-DC converters. It is AEC-Q101 qualified and meets UL 94 V-0 flammability rating.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: AEC-Q101 qualified, RoHS Compliant, UL 94 V-0 Flammability Rating
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25 | 7 | A | ||
| TA=100 | 4.5 | A | ||||
| ID | TC=25 | 40 | A | |||
| ID | TC =100 | 25 | A | |||
| Pulsed Drain Current | IDM | 120 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=50V, VG=10V, RG=25, L=2mH, IAS=9A | 81 | mJ | ||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | ||
| TA=100 | 1 | W | ||||
| PD | TC=25 | 70 | W | |||
| PD | TC =100 | 28 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient Steady-State | RJA | 40 | 50 | /W | ||
| Thermal Resistance Junction-to-Case Steady-State | RJC | 1.5 | 1.8 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | - | 1 | µA | |
| VDS=100V, VGS=0V, Tj=150 | - | 100 | µA | |||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | - | ±100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 15 | 19 | mΩ | |
| VGS=4.5V, ID=20A | 18 | 23 | mΩ | |||
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 0.9 | 1.2 | V | |
| Gate resistance | RG | f=1MHz, Open drain | 1.4 | - | Ω | |
| Maximum Body-Diode Continuous Current | IS | - | 40 | A | ||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | 1150 | - | pF | |
| Output Capacitance | Coss | 370 | - | pF | ||
| Reverse Transfer Capacitance | Crss | 8 | - | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=20A | 17 | - | nC | |
| Gate-Source Charge | Qgs | 6 | - | nC | ||
| Gate-Drain Charge | Qg | 3 | - | nC | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | 42 | - | nC | |
| Reverse Recovery Time | trr | 40 | - | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=50V, ID=20A RGEN=2.2 | 40 | - | ns | |
| Turn-on Rise Time | tr | 12 | - | ns | ||
| Turn-off Delay Time | tD(off) | 55 | - | ns | ||
| Turn-off fall Time | tf | 16 | - | ns | ||
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