Built in resistor digital transistor YANGJIE UMD3N designed for surface mount and inverter circuits

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Product Description

Product Overview

The UMD3N is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, enabling inverter circuit designs. The epoxy meets UL-94 V-0 flammability rating and the package is ideally suited for automatic insertion.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Origin: China (implied by company location)
Certifications: RoHS, UL-94 V-0

Technical Specifications

Model	Item	Symbol	Unit	Conditions	Min	Typ	Max
DTR1-NPN	Supply Voltage	VCC	V				50
	Input Voltage	VIN	V		-10		+40
	Output Current	IO	mA				100
	Power Dissipation	PD	mW	Ta=25			150
	Junction Temperature	Tj		(Single)			150
	Storage Temperature	TSTG			-55		+150
	Input voltage (off)	VI(off)	V	VCC=5V,Ic=100uA	0.5		-
	Input voltage (on)	VI(on)	V	VO=0.3V,Ic=10mA	-		3
	Output voltage (on)	Vo(on)	V	Io /Ii =10mA/0.5 mA	-		0.3
	Input current	II	mA	VI=5V	-		0.88
DTR2-PNP	Supply Voltage	VCC	V				-50
	Input Voltage	VIN	V		-40		+10
	Output Current	IO	mA				-100
	Power Dissipation	PD	mW	Ta=25			150
	Junction Temperature	Tj					150
	Storage Temperature	TSTG			-55		+150
	Input voltage (off)	VI(off)	V	VCC=-5V,Ic=-100uA	-0.5		-
	Input voltage (on)	VI(on)	V	VO=-0.3V,Ic=-10mA	-		-3
	Output voltage (on)	Vo(on)	V	Io /Ii =-10mA/-0.5 mA	-		-0.3
	Input current	II	mA	VI=-5V	-		-0.88
Common	Output current (off)	IO(off)	uA	VCC=50V, Vi=0 (NPN) / VCC=-50V, Vi=0 (PNP)	-		0.5 (NPN) / -0.5 (PNP)
	DC current gain	GI		Vo=5V, Io =5mA (NPN) / Vo=-5V, Io =-5mA (PNP)	30	-	-
	Input resistance	R1	k		7	10	13
	Resistance ratio	R2/R1			0.8	1	1.2
	Transition frequency	fT	MHz	VCE=10V,IE=5mA,f=100MHz (NPN) / VCE=-10V,IE=-5mA,f=100MHz (PNP)	-	250	-