Power Switching N Channel MOSFET YANGJIE YJS10G06A with Split Gate Trench Technology and RoHS Compliance
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Product Description
Product Overview
The YJS10G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) & FOM, extremely low switching loss, and excellent stability and uniformity. This product is designed for power switching applications, uninterruptible power supplies, and DC-DC converters. It meets UL 94 V-0 flammability rating and is Halogen Free.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJS10G06A
- Technology: Split gate trench MOSFET
- Moisture Sensitivity Level: 3
- Flammability Rating: UL 94 V-0
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V, Tj=150 | - | - | 100 | A |
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1 | 1.85 | 3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=10A | - | 8.5 | 11 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=8A | - | 11 | 15 | m |
| Diode Forward Voltage | VSD | IS=10A, VGS=0V | - | 0.85 | 1.2 | V |
| Gate resistance | RG | f=1MHz, Open drain | - | 1.8 | - | |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 10 | A |
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | - | 1390 | - | pF |
| Output Capacitance | Coss | - | - | 315 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 25 | - | pF |
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=5A | - | 26 | - | nC |
| Gate-Source Charge | Qgs | - | - | 6 | - | - |
| Gate-Drain Charge | Qg d | - | - | 5 | - | - |
| Reverse Recovery Charge | Qrr | IF=5A, di/dt=100A/us | - | 22 | - | nC |
| Reverse Recovery Time | trr | - | - | 30 | - | ns |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=30V, ID=5A RGEN=3 | - | 11 | - | ns |
| Turn-on Rise Time | tr | - | - | 24 | - | - |
| Turn-off Delay Time | tD(off) | - | - | 28 | - | - |
| Turn-off fall Time | tf | - | - | 25 | - | - |
| Avalanche energy | EAS | TJ=25, VDD=50V, VG=10V, RG=25, L=1mH, IAS=13A | - | 84 | - | mJ |
| Total Power Dissipation | PD | TA=25 | - | - | 2.5 | W |
| Total Power Dissipation | PD | TA=100 | - | - | 1 | W |
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | - | 40 | 50 | /W |
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