Silicon Carbide Schottky Diode 600V Wolfspeed CSD01060E-TR for Power Factor Correction and Motor Drive
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The Wolfspeed CSD01060E is a 600V Silicon Carbide Schottky Diode designed for high-frequency applications. It offers essential features such as zero reverse recovery current and zero forward recovery voltage, leading to higher efficiency and reduced rectifier heat sink requirements. This diode is ideal for replacing bipolar rectifiers with unipolar ones, enabling parallel operation without thermal runaway. Its applications include switch mode power supplies (SMPS), power factor correction (typical PFC Pout: 100W-200W), and motor drives (typical power: 0.25HP-0.5HP).
Product Attributes
- Brand: Wolfspeed
- Package Type: TO-252-2
- Material: Silicon Carbide
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| Maximum Ratings (TC = 25 C Unless Otherwise Specified) | |||||
| Repetitive Peak Reverse Voltage | VRRM | 600 | V | ||
| Surge Peak Reverse Voltage | VRSM | 600 | V | ||
| DC Blocking Voltage | VDC | 600 | V | ||
| Continuous Forward Current | IF | 4 | A | TC = 25 C | 2 |
| 1 | A | TC = 135 C | 1 | ||
| 1 | A | TC = 158 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 7 | A | TC = 25 C, tP = 10 ms, Half Sine Wave | |
| 5.5 | A | TC = 125 C, tP = 10 ms, Half Sine Wave | |||
| Non-Repetitive Peak Forward Surge Current | IFSM | 9 | A | TC = 25 C, tP = 1.5 ms, Half Sine Wave | |
| 32 | A | TC = 25 C, tP = 10 s, Pulse | |||
| Power Dissipation | Ptot | 21.4 | W | TC = 25 C | |
| 7.1 | W | TC = 125 C | |||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | C | ||
| Electrical Characteristics | |||||
| Forward Voltage | VF | 1.6 | V | IF = 1 A, TJ = 25 C | 2 |
| 1.8 | V | IF = 1 A, TJ = 25 C | |||
| 2.0 | V | IF = 1 A, TJ = 175 C | |||
| 2.4 | V | IF = 1 A, TJ = 175 C | |||
| Reverse Current | IR | 20 | A | VR = 600 V, TJ = 25 C | |
| 100 | A | VR = 600 V, TJ = 25 C | |||
| 40 | A | VR = 600 V, TJ = 150 C | |||
| 500 | A | VR = 600 V, TJ = 150 C | |||
| Total Capacitive Charge | QC | 3.3 | nC | VR = 600 V, IF = 1 A, di/dt = 500 A/S, TJ = 25 C | |
| Total Capacitance | C | 80 | pF | VR = 0 V, TJ = 25 C, f = 1 MHz | |
| 11 | pF | VR = 200 V, TJ = 25 C, f = 1 MHz | |||
| 8.5 | pF | VR = 400 V, TJ = 25 C, f = 1 MHz | |||
| Thermal Characteristics | |||||
| Thermal Resistance from Junction to Case | RJC | 7 | C/W | ||
| Thermal Resistance from Junction to Ambient | RJA | 60 | C/W | ||
| Models | |||||
| Part Number | CSD01060E | ||||
| Part Number | CSD01060 | ||||
| Package Marking | CSD01060 | ||||
Package Dimensions (TO-252-2)
| Symbol | MIN (mm) | MAX (mm) |
|---|---|---|
| A | 2.184 | 2.388 |
| A1 | 0.00 | 0.127 |
| A2 | 0.97 | 1.17 |
| b | 0.64 | 0.88 |
| b2 | 0.635 | 1.143 |
| b3 | 5.004 | 5.60 |
| c | 0.46 | 0.58 |
| c2 | 0.457 | 0.864 |
| D | 5.867 | 6.248 |
| D1 | 5.21 | --- |
| E | 6.35 | 6.73 |
| E1 | 4.32 | --- |
| e | 4.521 | 4.623 |
| H | 9.652 | 10.414 |
| L3 | 0.889 | 1.27 |
| L | 1.245 | 1.445 |
| L4 | 0.462 | REF |
| R | 0.254 | TYP |
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