Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
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Product Description
Product Overview
The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth capabilities. It is suitable for a range of applications from narrow band UHF, L, and S-Band to multi-octave bandwidth amplifiers. The transistor is available in 2-lead flange and pill package types. Large signal models are available for ADS and MWO.
Product Attributes
- Brand: MACOM Technology Solutions Inc.
- Material: Gallium Nitride (GaN)
- Package Types: 440193 & 440206
- Part Numbers: CGHV40050F & CGHV40050P
Technical Specifications
| Parameter | Symbol | Rating | Units | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 150 | V | 25C |
| Gate-to-Source Voltage | VGS | -10, +2 | ||
| Storage Temperature | TSTG | -65, +150 | C | |
| Operating Junction Temperature | TJ | 225 | ||
| Maximum Forward Gate Current | IGMAX | 10.4 | mA | 25C |
| Maximum Drain Current | IDMAX | 6.3 | A | |
| Soldering Temperature | TS | 245 | C | 30 Seconds |
| Screw Torque | 40 | in-oz | ||
| Thermal Resistance, Junction to Case | RJC | 3.04 | C/W | CGHV40050P at PDISS = 41.6 W |
| Thermal Resistance, Junction to Case | 3.11 | C/W | CGHV40050F at PDISS = 41.6 W | |
| Case Operating Temperature | TC | -40, +80 | C | |
| Electrical Characteristics (TC = 25C) | ||||
| Gate Threshold Voltage | VGS(th) | -3.8 | VDC | VDS = 10 V, ID = 10.4 mA |
| -3.0 | ||||
| -2.3 | ||||
| Gate Quiescent Voltage | VGS(Q) | -2.7 | V | VDS = 50 V, ID = 0.3 A |
| Saturated Drain Current | IDS | 6.8 | A | VDS = 6.0 V, VGS = 2.0 V |
| 9.7 | ||||
| Drain-Source Breakdown Voltage | VBR | 100 | VDC | VGS = -8 V, ID = 10.4 mA |
| RF Characteristics (TC = 25C, F0 = 1.8 GHz unless otherwise noted) | ||||
| Small Signal Gain | GSS | 17.5 | dB | VDD = 50 V, IDQ = 0.3 A |
| 19 | ||||
| Power Gain | GP | 15.5 | VDD = 50 V, IDQ = 0.3 A, POUT = PSAT | |
| Output Power at Saturation | PSAT | 70 | W | VDD = 50 V, IDQ = 0.3 A |
| 77 | ||||
| Drain Efficiency | 48 | % | VDD = 50 V, IDQ = 0.3 A, POUT = PSAT | |
| 53 | ||||
| Output Mismatch Stress | VSWR | 10:1 | Y | No damage at all phase angles, VDD = 50 V, IDQ = 0.3 A, POUT = 50 W CW |
| Dynamic Characteristics | ||||
| Input Capacitance | CGS | 16 | pF | VDS =50 V, VGS = -8 V, f = 1 MHz |
| Output Capacitance | CDS | 5 | ||
| Feedback Capacitance | CGD | 0.3 | ||
| Typical Performance Over 800 MHz - 2.0 GHz (TC = 25C), 50 V | ||||
| Small Signal Gain | 17.6 | dB | 800 MHz | |
| 16.9 | 1.2 GHz | |||
| 17.7 | 1.4 GHz | |||
| 17.5 | 1.8 GHz | |||
| 14.8 | 2.0 GHz | |||
| Saturated Output Power | 65 | W | 800 MHz | |
| 70 | 1.2 GHz | |||
| 63 | 1.4 GHz | |||
| 77 | 1.8 GHz | |||
| 60 | 2.0 GHz | |||
| Drain Efficiency @ PSAT | 63 | % | 800 MHz | |
| 63 | 1.2 GHz | |||
| 60 | 1.4 GHz | |||
| 53 | 1.8 GHz | |||
| 52 | 2.0 GHz | |||
| Input Return Loss | 5 | dB | 800 MHz | |
| 5.5 | 1.2 GHz | |||
| 4.2 | 1.4 GHz | |||
| 8 | 1.8 GHz | |||
| 5 | 2.0 GHz | |||
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