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IGBT YANGJIE DGW40N120CTLQ for automotive industrial inverter AC DC servo drive and UPS applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The DGW40N120CTLQ is a high-performance IGBT designed for automotive and industrial applications. It features low collector-emitter saturation voltage, a maximum junction temperature of 175, and is qualified to AEC-Q101. This device includes a fast and soft recovery anti-parallel FWD, offering high short circuit capability (10s) and RoHS compliance. It is suitable for general inverters, AC/DC servo drive amplifiers, and uninterruptible power supplies.

Product Attributes

  • Brand: S-M370D
  • Certifications: RoHS Compliant, AEC-Q101 Qualified

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Collector-Emitter Breakdown VoltageVCEDC1200V
Collector CurrentICTC= 25C80A
TC= 100C40
VCE=1200 V40
VCE(sat), IC=40A1.85
Diode Forward CurrentIFTC= 25C80A
TC= 100C40
IF= 40A1.60
Tj= 150C2.60
Continuous Gate-Emitter VoltageVGE20V
Transient Gate-Emitter VoltageVGE(tp10s,D<0.010)30V
Turn off Safe Operating AreaVCE1200V, Tj 150C160A
Pulsed Collector CurrentICMVGE=15V, tp limited by Tjmax160A
Diode Pulsed CurrentIFpulstp limited by Tjmax160A
Short Circuit Withstand TimeTscVGE= 15V, VCC=600VVCEM1200V10s
Power DissipationPtotTj=175C,Tc=25C428W
Static Collector-Emitter Breakdown VoltageBVCESVGE=0V, IC=250A1200V
Gate Threshold VoltageVGE(th)VGE=VCE, IC=1.4mA4.85.66.5V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=40AV
Tj=25C1.85
Tj=125C2.20
Tj=150C2.302.40
Zero Gate Voltage Collector CurrentICESVCE=1200V, VGE=0VmA
Tj= 25C0.25
Tj=150C5.00
Gate-Emitter Leakage CurrentIGESVCE= 0V, VGE= 30V200nA
Input CapacitanceCiesVCE= 25V, VGE= 0V, f = 1MHz2.50nF
Reverse Transfer CapacitanceCres0.09nF
Gate ChargeQGVCC=960V,IC=40A, VGE=15V0.33uC
Short Circuit Collector CurrentISCVGE=15V, tsc10us, Vcc=600V,Tj150C150A
Operating Junction TemperatureTj-40175C
Storage TemperatureTs-55150C
Soldering Temperaturewave soldering 1.6mm from case for 10s260C
Diode Forward VoltageVFIF= 40AV
Tj= 25C1.60
Tj= 125C1.802.00
Tj= 150C1.702.60
Turn-on Delay Timetd(on)VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12ns
Tj= 25C45
Tj= 125C50
Tj= 150C53
Rise TimetrVCC= 600V, IC=40A, VGE= -15V~15V, Rg=12ns
Tj= 25C56
Tj= 125C58
Tj= 150C60
Turn-on EnergyEonVCC= 600V, IC=40A, VGE= -15V~15V, Rg=12mJ
Tj= 25C3.8
Tj= 125C5.4
Tj= 150C5.8
Turn-off Delay Timetd(off)VCC= 600V, IC=40A, VGE= -15V~15V, Rg=12ns
Tj= 25C180
Tj= 125C240
Tj= 150C260
Fall TimetfVCC= 600V, IC=40A, VGE= -15V~15V, Rg=12ns
Tj= 25C80
Tj= 125C85
Tj= 150C90
Turn-off EnergyEoffVCC= 600V, IC=40A, VGE= -15V~15V, Rg=12mJ
Tj= 25C1.7
Tj= 125C2.7
Tj= 150C3.0
Reverse Recovery CurrentIrrIF=40A, VR=600V, di/dt= -520A/sA
Tj= 25C14
Tj= 125C18
Tj= 150C20
Diode reverse recovery timetrrIF=40A, VR=600V, di/dt= -520A/sns
Tj= 25C439
Tj= 125C628
Tj= 150C773
Reverse Recovery ChargeQrrIF=40A, VR=600V, di/dt= -520A/suC
Tj= 25C2.55
Tj= 125C6.33
Tj= 150C7.05
Reverse Recovery EnergyErecIF=40A, VR=600V, di/dt= -520A/smJ
Tj= 25C0.92
Tj= 125C2.05
Tj= 150C2.25
IGBT Thermal Resistance, Junction - CaseRth(j-c)0.35K/W
Diode Thermal Resistance, Junction - CaseRth(j-c)0.65K/W
Thermal Resistance, Junction - AmbientRth(j-a)40K/W

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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