Copper Baseplate Silicon Nitride Insulator Wolfspeed CAB320M17XM3 Silicon Carbide Half Bridge Module
Product Overview
The Wolfspeed CAB320M17XM3 is a 1700 V, 3.5 m Silicon Carbide Half-Bridge Module designed for high power density applications. It features a high junction temperature operation of up to 175 C and a low-inductance design of 6.7 nH. This module implements Wolfspeeds third-generation SiC MOSFET technology, incorporating a Silicon Nitride insulator and a copper baseplate. Its terminal layout facilitates direct bus bar connections, enabling simple, low-inductance system designs. Integrated temperature sensing provides high-level temperature protection, while a dedicated high-side Kelvin-drain pin allows for direct voltage sensing for gate driver overcurrent protection. The 1700 VDS rating supports operation with higher bus voltages, typically up to 1.4 kV. Typical applications include energy, medical, motor & motion control, test and production equipment, transportation, and traction inverters.
Product Attributes
- Brand: Wolfspeed
- Technology: Third Generation SiC MOSFET
- Insulator Material: Silicon Nitride
- Baseplate Material: Copper
- Registered Trademarks: Wolfspeed, Wolfstreak logo
- Trademark: Wolfspeed logo
- RoHS Compliance: Compliant with EU Directive 2011/65/EC (RoHS2)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions | Notes |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 1700 | V | TC = 25 C | |||
| Maximum Gate-Source Voltage | VGS max | -8 | +19 | V | Transient | Note 1 | |
| Operational Gate-Source Voltage | VGS op | -4 | +15 | V | |||
| Static DC Continuous Drain Current | ID | 333 | 438 | A | VGS = 15 V, TC = 90 C, TVJ 175 C | Notes 2,3 | |
| Pulsed Drain Current | IDM | 640 | A | tPmax limited by TVJ op, VGS = 15 V, TC = 25 C | |||
| Power Dissipation | PD | 1546 | W | TC = 25 C, TVJ 175 C | Note 4 | ||
| Operational Virtual Junction Temperature | TVJ op | -40 | 175 | C | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1700 | V | VGS = 0 V, TVJ = -40 C | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, IDS = 127 mA | |
| Zero Gate Voltage Drain Current | IDSS | 5 | 200 | A | VGS = 0 V, VDS = 1700 V | ||
| Drain-Source On-State Resistance | RDS(on) | 3.5 | 4.6 | m | VGS = 15 V, ID = 320 A | ||
| Input Capacitance | Ciss | 37.6 | nF | VGS = 0 V, VDS = 1000 V, VAC = 25 mV, f = 100 kHz | |||
| Stray Inductance | LStray | 6.7 | nH | Between terminals 2 & 3, f = 10 MHz | |||
| Weight | W | 175 | g | ||||
| Case Isolation Voltage | VIsol | 4.0 | kV | AC, 50 Hz, 1 minute | |||
| Temperature Sensor (NTC) Resistance at 25C | R25 | 4700 | TNTC = 25 C | Tolerance 1 % |
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