Power electronics IGBT module YANGJIE MG75P12E2 featuring Trench technology and fast recovery diode

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Product Description

Product Overview

The MG75P12E2 S-M332 is a high-performance IGBT module designed for power electronics applications. It features low Vce(sat) with Trench technology, a positive temperature coefficient for Vce(sat), and an integrated fast & soft recovery anti-parallel diode. The module boasts a low inductance case, high short circuit capability, and a maximum junction temperature of 175, making it suitable for motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS).

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: RoHS COMPLIANT

Technical Specifications

Module Type	Parameter	Conditions	Value Unit	Min.	Typ.	Max.
IGBT-inverter	VCES	VGE=0V, IC =1mA, Tvj=25	V			1200
	IC	Tc=100, Tvjmax=175	A			75
	ICRM	tp=1ms	A			150
	VGES	Tvj=25	V			20
	Ptot	Tc=25,Tvjmax=175	W			476
	VGE(th)	VGE=VCE, IC =2.6mA,Tvj=25	V	5.8	6.5	7.2
	ICES	VCE=1200V,VGE=0V, Tvj=25	mA			1.0
	VCE(sat)	Ic=75A,VGE=15V, Tvj=25	V		1.85	2.15
	VCE(sat)	Ic=75A,VGE=15V, Tvj=125	V			2.05
	VCE(sat)	Ic=75A,VGE=15V, Tvj=150	V			2.10
	QG		uC		0.78
	Cies	VCE=25V,VGE =0V, f=1MHz, Tvj=25	nF		4.00
Diode-inverter	VRRM	Tvj=25	V			1200
	IF		A			75
	IFRM	tp=1ms	A			150
	VF	IF=75A,Tvj=25	V		2.00	2.30
	VF	IF=75A,Tvj=125	V			2.10
	VF	IF=75A,Tvj=150	V			2.15
	Qrr	IF =75 A, VR=600V, -diF/dt =900A/us, Tvj=25	uC		4.2
IGBT-brake-chopper	VCES	VGE=0V, IC =1mA, Tvj=25	V			1200
	IC	Tc=100,Tvjmax=175	A			40
	ICRM	tp=1ms	A			80
	VGES	Tvj=25	V			20
	Ptot	Tc=25, Tvjmax=175	W			300
	VGE(th)	VGE=VCE, IC =1.2mA,Tvj=25	V	5.8	6.7	7.2
	ICES	VCE=1200V,VGE=0V, Tvj=25	mA			1.0
	VCE(sat)	Ic=40A,VGE=15V, Tvj=25	V		1.95	2.35
	VCE(sat)	Ic=40A,VGE=15V, Tvj=125	V			2.30
	VCE(sat)	Ic=40A,VGE=15V, Tvj=150	V			2.40
	QG		uC		0.27
	Cies	VCE=25V,VGE =0V, f=1MHz, Tvj=25	nF		2.00
Diode-Brake-Chopper	VRRM	Tj=25	V			1200
	IF		A			40
	IFRM	tp=1ms	A			80
	I2t	VR=0,tp=10ms,Tj=125	A2s			240
	I2t	VR=0,tp=10ms,Tj=150	A2s			220
	VF	IF=40A,Tvj=25	V		1.75	2.25
	VF	IF=40A,Tvj=125	V		1.75
Diode-Rectifier	VRRM	Tj=25	V			1600
	IF(AV)	50/60Hz, sine wave, Tc=80	A			80
	IRMSM	Tc=80	A			120
	IFSM	VR=0,tp=10ms,Tj=45	A			1100
	I2t	VR=0,tp=10ms,Tj=45	A2s			6050
NTC-Thermistor	R25		k		5.0
	R/R	TC=100,R100=493.3	%	-5		5
	P25		mW			20.0
	B-value	B25/50	K		3375
Module Characteristics	Visol	t=1min,f=50Hz	V		2500
	Tjmax	Inverter, brake				175
	Tjmax	rectifier				150
	Tvj op			-40		150
	Tstg			-40		125
	LCE		nH			60
	Rjc	per IGBT-inverter	K/W		0.315
	Rjc	per Diode-inverter	K/W		0.620
	RCS	per IGBT-inverter	K/W		0.118
	RCS	per Diode-inverter	K/W		0.205