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High Voltage Silicon N Channel VDMOSFET XCH 7N65M with Enhanced Switching Performance and 650V Rating

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The XCH7N65M is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The device is packaged in a RoHS-compliant TO-252 package.

Product Attributes

  • Brand: XCH
  • Material: Silicon N-Channel
  • Certifications: RoHS

Technical Specifications

ModelVDSS (V)ID (A)PD (W)RDS(ON) Typ. ()TJ, Tstg (C)RJC (C/W)RJA (C/W)
XCH7N65M6507950.9555 to 1501.3262
XCH4N65M6507950.9555 to 1501.3262
ParameterTest ConditionsRating (Min)Rating (Typ)Rating (Max)Units
VDSSVGS=0V,ID=250A650----V
BVDSS/TJID=250uA,Reference25--0.67--V/
IDSSVDS=650V, VGS=0V,Ta=25----1.0A
IDSSVDS=520V, VGS=0V,Ta=125----250A
IGSS(F)VGS=+30V----100nA
IGSS(R)VGS=-30V-----100nA
RDS(ON)VGS=10V,ID=3A--0.951.25
VGS(TH)VDS=VGS,ID=250A2.0--4.0V
gfsVDS=15V,ID=3A--6.5--S
CissVGS=0V VDS=25V f=1.0MHz--1050--pF
Coss----90--pF
Crss----4.5--pF
td(ON)ID=7A,VDD=325V VGS=10V,Rg=9.1--11--ns
tr----10--ns
td(OFF)----36--ns
tf----18--ns
QgID=7A,VDD=325V VGS=10V--24--nC
Qgs----5--nC
Qgd----8--nC
ISD(Body Diode)----7A
ISM(Body Diode)----28A
VSDIS=7A,VGS=0V----1.5V
trrIS=7A,Tj=25 dIF/dt=100A/s,VGS=0V--280--ns
Qrr----1.2--C

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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