Load Switching and Battery Protection P Channel MOSFET YANGJIE YJQD30P02A with High Speed Switching
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Product Description
Product Overview
The YJQD30P02A is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Trench Power MV MOSFET technology and a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This transistor is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJQD30P02A
- Certifications: RoHS COMPLIANT
- Website: www.21yangjie.com
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | -20 | V | |||
| Gate-source Voltage | VGS | ±10 | V | |||
| Drain Current (TA=25 @ Steady State) | ID | B | -30 | A | ||
| Drain Current (TA=100 @ Steady State) | ID | B | -19 | A | ||
| Drain Current (TA=25 @ Steady State) | ID | B | -10 | A | ||
| Drain Current (TA=70 @ Steady State) | ID | B | -8 | A | ||
| Pulsed Drain Current | IDM | A | -55 | A | ||
| Single Pulse Avalanche Energy | EAS | B | 31 | mJ | ||
| Total Power Dissipation (TA=25 @ Steady State) | PD | B | 32 | W | ||
| Total Power Dissipation (TA=100 @ Steady State) | PD | B | 12.8 | W | ||
| Total Power Dissipation (TA=25 @ Steady State) | PD | B | 3 | W | ||
| Total Power Dissipation (TA=70 @ Steady State) | PD | B | 1.9 | W | ||
| Thermal Resistance Junction-to-Ambient @ Steady State | RJA | B | 42 | / W | ||
| Thermal Resistance Junction-to-Case @ Steady State | RJC | C | 3.9 | / W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V,TC=25 | -1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250µA | -0.4 | -0.62 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-15A | 11 | 19 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -2.5V, ID=-8A | 14 | 22 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -1.8V, ID=-6.0A | 20 | 30 | mΩ | |
| Diode Forward Voltage | VSD | IS=-30A,VGS=0V | -0.8 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -30 | A | |||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHZ | 2992 | pF | ||
| Output Capacitance | Coss | 330 | pF | |||
| Reverse Transfer Capacitance | Crss | 272 | pF | |||
| Total Gate Charge | Qg | VGS=-10V,VDS=-15V,ID=-9.1A | 72.8 | nC | ||
| Gate Source Charge | Qgs | 6.6 | nC | |||
| Gate Drain Charge | Qgd | 10.1 | nC | |||
| Reverse Recovery Charge | Qrr | IF=-6A, di/dt=100A/us | 34 | |||
| Reverse Recovery Time | trr | 67 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5Ω | 7 | |||
| Turn-on Rise Time | tr | 33 | ||||
| Turn-off Delay Time | tD(off) | 130 | ||||
| Turn-off Fall Time | tf | 132 | ||||
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