Low RDSON N channel MOSFET XCH XCH2310 suitable for load switch and small power switching applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The FKN6008 is a high cell density trenched N-channel MOSFET offering excellent RDSON and efficiency, ideal for small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
- Meets RoHS and Green Product requirement
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | TA= 25 | 3 | A | ||
| Continuous Drain Current | ID | TA= 100 | 2 | A | ||
| Pulsed Drain Current | IDM | note1 | 12 | A | ||
| Power Dissipation | PD | TA= 25 | 1.5 | W | ||
| Thermal Resistance, Junction to Ambient | RJA | 83 | /W | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | to +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1.0 | μA |
| Gate to Body Leakage Current | IGSS | VDS=0V, VGS=±20V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 1.4 | 2.0 | V |
| Static Drain-Source on-Resistance | RDS(on) | VGS=10V, ID=3A, note2 | - | 75 | 100 | mΩ |
| Static Drain-Source on-Resistance | RDS(on) | VGS=4.5V, ID=2A, note2 | - | 85 | 120 | mΩ |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 350 | - | pF |
| Output Capacitance | Coss | - | 29 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 23 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, ID=3A, VGS=10V | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | nC | |
| Gate-Drain(Miller) Charge | Qgd | - | 2 | - | nC | |
| Turn-on Delay Time | td(on) | VDD=30V,ID=2A, RGEN=3Ω, VGS=10V | - | 5 | - | ns |
| Turn-on Rise Time | tr | - | 7 | - | ns | |
| Turn-off Delay Time | td(off) | - | 37 | - | ns | |
| Turn-off Fall Time | tf | - | 22 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain to Source Diode Forward Current | IS | - | - | 3 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | - | 12 | A | |
| Drain to Source Diode Forward Voltage | VSD | VGS = 0V, IS=3A | - | - | 1.2 | V |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina