SOT23 packaged YTL PBSS4140T NPN transistor with 40V breakdown voltage and 100MHz transition frequency

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Product Description

Product Overview

The PBSS4140T is an NPN transistor in a SOT-23 package, designed for general-purpose amplification and switching applications. It offers a breakdown voltage of 40V (Collector-Base) and 25V (Collector-Emitter), with a continuous collector current of up to 1.2A and a power dissipation of 0.3W. This device provides a DC current gain (hFE) of up to 350 at 100mA and 100MHz transition frequency.

Product Attributes

Package Type: SOT-23
Transistor Type: NPN

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=40V, IE=0		0.1		A
Collector cut-off current	ICEO	VCB=20V, IE=0		0.1		A
Emitter cut-off current	IEBO	VEB= 5V, IC=0		0.1		A
DC current gain	hFE(1)	VCE=1V, IC= 100mA	200	350
DC current gain	hFE(2)	VCE=1V, IC= 800mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=800mA, IB= 80mA		0.5		V
Base-emitter saturation voltage	VBE(sat)	IC=800mA, IB= 80mA		1.2		V
Transition frequency	fT	VCE=10V, IC= 50mA, f=30MHz	100			MHz
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current -Continuous	IC				1.2	A
Collector Power Dissipation	PC				0.3	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150