AEC Q101 Certified N Channel MOSFET YANGJIE YJG60N04AQ with Low RDS ON and Drain Current Performance
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Product Description
Product Overview
The YJG60N04AQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a high-density cell design for low RDS(ON), an excellent package for heat dissipation, and is 100% EAS and VDS tested. This transistor is AEC-Q101 qualified and suitable for power switching applications, uninterruptible power supplies, and DC-DC converters.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Part Number: YJG60N04AQ
- Certification: AEC-Q101 Qualified (Suffix "Q")
- Moisture Sensitivity Level: 3
- Origin: China (Implied by company location)
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 40 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TA=25 | 13 | A | ||
| Drain Current | ID | TA =100 | 8.5 | A | ||
| Drain Current | ID | TC=25 | 60 | A | ||
| Drain Current | ID | TC =100 | 38 | A | ||
| Pulsed Drain Current | IDM | 180 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=38V, VG=10V, L=0.5mH, IAS=20A | 100 | mJ | ||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | ||
| Total Power Dissipation | PD | TA =100 | 1 | W | ||
| Total Power Dissipation | PD | TC=25 | 50 | W | ||
| Total Power Dissipation | PD | TC =100 | 20 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.5 | /W | |||
| Thermal Resistance Junction-to-Ambient | RJA | Device mounted on 1 in2 FR-4 board with 2oz. Copper, still air | 50 | /W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 5 | 7 | m | |
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 0.85 | 1.2 | V | |
| Gate resistance | RG | f=1MHz | 1.7 | |||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 2100 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 250 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 21 | pF | ||
| Total Gate Charge | Qg | VGS=10V, VDS=20V, ID=20A | 23 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V, VDS=20V, ID=20A | 3.5 | nC | ||
| Gate-Drain Charge | Qg | VGS=10V, VDS=20V, ID=20A | 6.5 | nC | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=300A/us | 10 | nC | ||
| Reverse Recovery Time | trr | IF=20A, di/dt=300A/us | 12 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=20V, ID=20A, RGEN=3 | 3.8 | ns | ||
| Turn-on Rise Time | tr | VGS=10V, VDD=20V, ID=20A, RGEN=3 | 58 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V, VDD=20V, ID=20A, RGEN=3 | 20 | ns | ||
| Turn-off fall Time | tf | VGS=10V, VDD=20V, ID=20A, RGEN=3 | 2.6 | ns | ||
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