N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
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Product Description
Product Overview
The YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM applications and load switching.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 20 | V | |||
| Gate-source Voltage | VGS | ±12 | V | |||
| Drain Current | ID | TA=25℃ | 0.7 | A | ||
| Drain Current | ID | TA=100℃ | 0.44 | A | ||
| Pulsed Drain Current | IDM | 3 | A | |||
| Total Power Dissipation | PD | TA=25℃ | 0.9 | W | ||
| Total Power Dissipation | PD | TA=100℃ | 0.36 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ℃ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V, Tj=150℃ | 100 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | ±10 | µA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 0.35 | 0.75 | 1.1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=0.7A | 180 | 300 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 2.5V, ID=0.5A | 260 | 350 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 1.8V, ID=0.2A | 490 | 700 | mΩ | |
| Diode Forward Voltage | VSD | IS=0.7A,VGS=0V | 1.2 | V | ||
| Gate Resistance | Rg | f=1 MHz | 50 | Ω | ||
| Maximum Body-Diode Continuous Current | IS | 0.7 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHZ | 56 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHZ | 20 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHZ | 2.5 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=0.7A | 1 | nC | ||
| Gate Source Charge | Qgs | VGS=4.5V,VDS=10V,ID=0.7A | 0.28 | nC | ||
| Gate Drain Charge | Qg | VGS=4.5V,VDS=10V,ID=0.7A | 0.22 | nC | ||
| Reverse Recovery Chrage | Qrr | IF=0.7A, di/dt=20A/us | 0.4 | nC | ||
| Reverse Recovery Time | trr | IF=0.7A, di/dt=20A/us | 14.4 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=4.5V,VDD=10V,RG=10Ω,ID=700mA | 2 | ns | ||
| Turn-on Rise Time | tr | VGS=4.5V,VDD=10V,RG=10Ω,ID=700mA | 18.8 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=4.5V,VDD=10V,RG=10Ω,ID=700mA | 10 | ns | ||
| Turn-off Fall Time | tf | VGS=4.5V,VDD=10V,RG=10Ω,ID=700mA | 23 | ns | ||
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