Silicon N Channel Power Transistor XCH XCH13N50F with 500V Drain to Source Voltage and TO 220F Package
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Product Description
Product Overview
The XCH13N50F is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and increased efficiency. The device comes in a RoHS-compliant TO-220F package.
Product Attributes
- Brand: XCH
- Material: Silicon N-Channel
- Package: TO-220F
- Certifications: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
| VDSS | Drain-to-Source Voltage | 500 | V | |
| ID | Continuous Drain Current | 13 | A | |
| IDM | Pulsed Drain Current | 52 | A | |
| VGS | Gate-to-Source Voltage | ±30 | V | |
| EAS | Single Pulse Avalanche Energy | L=10mH, ID=13A, Start TJ=25 | 900 | mJ |
| PD | Power Dissipation | TC=25 | 48 | W |
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| RJC | Thermal Resistance, Junction-to-Case | 2.6 | /W | |
| RJA | Thermal Resistance, Junction-to-Ambient | 100 | /W | |
| BVDSS | Drain to Source Breakdown Voltage | VGS=0V,ID=250A | 500 | V |
| IDSS | Drain to Source Leakage Current | VDS=500V, VGS=0V,Ta=25 | 1.0 | µA |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -100 | nA |
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=6.5A | 0.55 | Ω |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 4.0 | V |
| gfs | Forward Trans conductance | VDS=30V,ID=13A | 15 | S |
| Ciss | Input Capacitance | VGS=0V VDS=25V f=1.0MHz | 1670 | pF |
| Coss | Output Capacitance | 155 | pF | |
| Crss | Reverse Transfer Capacitance | 17 | pF | |
| td(ON) | Turn-on Delay Time | ID=10A,VDD=250V VGS=13V,Rg=6.1Ω | 12 | ns |
| tr | Rise Time | 21 | ns | |
| td(OFF) | Turn-Off Delay Time | 38 | ns | |
| tf | Fall Time | 30 | ns | |
| Qg | Total Gate Charge | ID=13A,VDD=250V VGS=10V | 31 | nC |
| Qgs | Gate to Source Charge | 8.6 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 10 | nC | |
| ISD | Continuous Source Current (Body Diode) | 13 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | 52 | A | |
| VSD | Diode Forward Voltage | IS=13A,VGS=0V | 1.5 | V |
| trr | Reverse Recovery Time | IS=13A,Tj=25 dIF/dt=100A/μs,VGS=0V | 460 | ns |
| Qrr | Reverse Recovery Charge | 2.6 | μC |
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Sellina