Power Management Transistor YANGJIE YJD18GP10AQ P Channel Enhancement Mode MOSFET with Excellent Uniformity
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The YJD18GP10AQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This AEC-Q101 qualified transistor is designed for power management and portable equipment applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Part Number: YJD18GP10AQ
- Technology: P-Channel Enhancement Mode Field Effect Transistor
- Certifications: AEC-Q101 Qualified
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Drain Current | ID | -18 | A | |||
| RDS(ON) | RDS(ON) | VGS=-10V | <110 | m | ||
| RDS(ON) | RDS(ON) | VGS=-4.5V | <120 | m | ||
| 100% UIS Tested | Yes | |||||
| 100% VDS Tested | Yes | |||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25 | -100 | V | ||
| Gate-Source Voltage | VGS | TA=25 | 20 | V | ||
| Drain Current | ID | TC=25 | -18 | A | ||
| Drain Current | ID | Tc=100 | -12 | A | ||
| Pulsed Drain Current | IDM | -72 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=-50V, VG=-10V, RG=25, L=0.5mH, ID=-12A | 36 | mJ | ||
| Total Power Dissipation | PD | Tc=25 | 72 | W | ||
| Total Power Dissipation | PD | Tc=100 | 29 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 40 | 50 | /W | |
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 1.35 | 1.7 | /W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -100 | - | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V, Tj=150 | -100 | A | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS= 20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -1.0 | -1.8 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-10A | 83 | 110 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-5A | 95 | 120 | m | |
| Diode Forward Voltage | VSD | IS=-10A, VGS=0V | -1.3 | V | ||
| Gate resistance | RG | f=1MHz, Open drain | 10 | - | ||
| Maximum Body-Diode Continuous Current | IS | -18 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=-50V, VGS=0V, f=1MHz | 1051 | - | pF | |
| Output Capacitance | Coss | VDS=-50V, VGS=0V, f=1MHz | 119 | - | pF | |
| Reverse Transfer Capacitance | Crss | VDS=-50V, VGS=0V, f=1MHz | 25 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=-10V, VDS=-50V, ID=-5A | 20.1 | - | nC | |
| Gate-Source Charge | Qgs | VGS=-10V, VDS=-50V, ID=-5A | 3.9 | - | nC | |
| Gate-Drain Charge | Qg | VGS=-10V, VDS=-50V, ID=-5A | 4.3 | - | nC | |
| Reverse Recovery Charge | Qrr | IF=-5A, di/dt=100A/us | 140 | - | nC | |
| Reverse Recovery Time | trr | IF=-5A, di/dt=100A/us | 70 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-50V, RL=2.5, RGEN=6 | 10 | - | ns | |
| Turn-on Rise Time | tr | VGS=-10V, VDD=-50V, RL=2.5, RGEN=6 | 30 | - | ns | |
| Turn-off Delay Time | tD(off) | VGS=-10V, VDD=-50V, RL=2.5, RGEN=6 | 77 | - | ns | |
| Turn-off fall Time | tf | VGS=-10V, VDD=-50V, RL=2.5, RGEN=6 | 81 | - | ns | |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina