Low Input Output Leakage N Channel Enhancement Mode Transistor YANGJIE 2N7002 for Solid State Relays
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Product Description
Product Overview
The 2N7002 is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. It functions as a voltage-controlled small signal switch, offering low input capacitance, fast switching speed, and low input/output leakage. This transistor is ideal for battery-operated systems, solid-state relays, and direct logic-level interfaces with TTL/CMOS.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS1 | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current | IGSS2 | VGS= 10V, VDS=0V | 50 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=-300mA | 1.2 | 2.5 | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=200mA | 1.3 | 3.0 | ||
| Diode Forward Voltage | VSD | IS=300mA,VGS=0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 340 | mA | |||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHZ | 16 | pF | ||
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHZ | 10 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHZ | 5.5 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=30V,ID=0.3A | 1.7 | 2.4 | nC | |
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V, ID=300mA, RGEN=6 | 5 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=30V, ID=300mA, RGEN=6 | 17 | ns | ||
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s | 30 | ns | ||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current (TA=25 @ Steady State) | ID | 340 | mA | |||
| Drain Current (TA=70 @ Steady State) | ID | 272 | mA | |||
| Pulsed Drain Current | IDM | 1.5 | A | |||
| Total Power Dissipation (@ TA=25) | PD | 350 | mW | |||
| Thermal Resistance Junction-to-Ambient (@ Steady State) | RJA | 357 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
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