Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits

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Product Description

The TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, notebook computers, and other battery-powered circuits. Its design prioritizes low in-line power loss within a very small surface mount package.

Product Attributes

Brand: XDSemi
Part Number: TX15N10B
Technology: DMOS Trench
Package: TO-252

Technical Specifications

Parameter	Symbol	Ratings	Units	Test Conditions	Min.	Typ.	Max.
Maximum Ratings
Drain-Source Voltage	VDSS	100	V
Gate-Source Voltage	VGSS	±20	V
Continuous Drain Current	ID	15	A	Tc=25
Continuous Drain Current	ID	14	A	Tc=70
Pulsed Drain Current	IDM	59	A	Tc=25
Power Dissipation	PD	34.7	W	Tc=25
Power Dissipation	PD	22.2	W	Tc=70
Operating Junction and Storage Temperature Range	TJ,Tstg	-55~+175
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	100	V	VGS=0V, ID=250μA	100
Gate Threshold Voltage	VGS(th)		V	VDS=VGS, ID=250μA		3
Gate-Body Leakage	IGSS		nA	VDS=0V, VGS=±20V		±100
Zero Gate Voltage Drain Current	IDSS		μA	VDS=100V, VGS=0V		1
Drain-Source On-Resistance	RDS(ON)		mΩ	VGS=10V, ID=8A		80	100
Diode Forward Voltage	VSD		V	IS=8A, VGS=0V		0.9	1.2
Dynamic Characteristics
Total Gate Charge	Qg		nC	VDD=80V, VGS=10V, ID=10A		24
Total Gate Charge	Qg		nC	VDD=80V, VGS=4.5V, ID=10A		13
Gate-Source Charge	Qgs		nC			4.6	7.6
Gate-Drain Charge	Qgd		nC			0.9
Gate Resistance	Rg		Ω	VDS=0V,VGS=0V, f=1MHz			39
Input Capacitance	Ciss		pF	VDS=15V, VGS=0V, f=1MHz		890
Output Capacitance	Coss		pF			58
Reverse Transfer Capacitance	Crss		pF			23
Switching Characteristics
Turn-On Delay Time	td(on)		ns	VDS =50V, RG=1Ω RL=5Ω,VGEN=10V,		15
Turn-On Rise Time	tr		ns			20
Turn-Off Delay Time	td(off)		ns			25
Turn-Off Fall Time	tf		ns			30
Thermal Characteristics
Thermal resistance, case to sink typ.	RthCS	0.5	/W
Thermal resistance junction to case.	RthJC	3.6	/W
Thermal resistance junction to ambient.	RthJA	110	/W