Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
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Product Description
Product Overview
The YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and motor drive applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=15A | 5.6 | 7.2 | m | |
| VGS= 4.5V, ID=10A | 6.8 | 8.5 | ||||
| Diode Forward Voltage | VSD | IS=15A,VGS=0V | 0.80 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 90 | A | |||
| Gate resistance | Rg | =1 MHz, Open drain | 2.1 | |||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHZ | 5170 | pF | ||
| Output Capacitance | Coss | 300 | ||||
| Reverse Transfer Capacitance | Crss | 155 | ||||
| Total Gate Charge | Qg(10V) | VGS=10V,VDS=30V,ID=20A | 102 | nC | ||
| Qg(4.5V) | 48 | |||||
| Gate-Source Charge | Qgs | 18.7 | ||||
| Gate-Drain Charge | Qg | 20 | ||||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | 18 | |||
| Reverse Recovery Time | trr | 27 | ns | |||
| Switching Parameters | tD(on) | VGS=10V, VDD=30V , ID=20A RGEN=3 | 12 | |||
| tr | 46 | |||||
| tD(off) | 90 | |||||
| tf | 80 | |||||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TC=25 | 90 | A | ||
| TC=100 | 57 | |||||
| Pulsed Drain Current | IDM | 300 | A | |||
| Total Power Dissipation | PD | @ TC=25 B | 110 | W | ||
| @ TC=100 B | 44 | |||||
| Total Power Dissipation | PD | @ TA=25 C | 6.2 | W | ||
| Single Pulse Avalanche Energy | EAS | D | 196 | mJ | ||
| Thermal Resistance Junction-to-Case | RJC | 1.14 | / W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 20 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
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