China complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities for sale

complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities

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Product Description

XR20G10 N-Ch and P-Ch Fast Switching MOSFETs

Product Description
The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. The XR20G10 meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.

Product Attributes

Brand: power-mos.com
Certifications: RoHS, Green Device Available

Technical Specifications

Symbol	Parameter	N-Channel Conditions	N-Channel Typ.	N-Channel Max.	N-Channel Unit	P-Channel Conditions	P-Channel Typ.	P-Channel Max.	P-Channel Unit
VDS	Drain-Source Voltage		100		V		-100		V
VGS	Gate-Source Voltage		20		V		20		V
ID@TA=25	Continuous Drain Current, VGS @ 10V		15.0		A		-10.0		A
ID@TA=70	Continuous Drain Current, VGS @ 10V		10.0		A		-5		A
IDM	Pulsed Drain Current		25		A		-18		A
EAS	Single Pulse Avalanche Energy		22.5		mJ		35.3		mJ
IAS	Avalanche Current		22.6		A		-26.6		A
PD@TA=25	Total Power Dissipation		3.5		W		3.5		W
TSTG	Storage Temperature Range		-55 to 150				-55 to 150
TJ	Operating Junction Temperature Range		-55 to 150				-55 to 150
RJA	Thermal Resistance Junction-Ambient		---	70	/W		---	70	/W
RJC	Thermal Resistance Junction-Case		---	61.5	/W		---	61.5	/W
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	100		V	VGS=0V , ID=-250uA	-100		V
RDS(ON)	Static Drain-Source On-Resistance	VGS=10V , ID=5A	65		m	VGS=-10V , ID=-3A	180	220	m
RDS(ON)	Static Drain-Source On-Resistance	VGS=4.5V , ID=3A	75	105	m	VGS=-4.5V , ID=-2A	210	255	m
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	2.5	V	VGS=VDS , ID =-250uA	-1.2	-2.5	V
IDSS	Drain-Source Leakage Current	VDS=100V , VGS=0V , TJ=25		1	uA	VDS=-80V , VGS=0V , TJ=25		-1	uA
IDSS	Drain-Source Leakage Current	VDS=100V, VGS=0V , TJ=100		100	uA	VDS=-80V , VGS=0V , TJ=85		-30	uA
IGSS	Gate-Source Leakage Current	VGS=20V , VDS=0V		100	nA	VGS=20V , VDS=0V		100	nA
gfs	Forward Transconductance	VDS=5V , ID=5A	12		S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	1.3			VDS=0V , VGS=0V , f=1MHz	13
Qg	Total Gate Charge	VDS=50V , VGS=10V , ID=5A			nC	VDS=-50V , VGS=-10V , ID=-2A	19		nC
Qgs	Gate-Source Charge				nC		3.4		nC
Qgd	Gate-Drain Charge				nC		2.9		nC
Td(on)	Turn-On Delay Time	VGS=10V, VDD=30V, RG=2.5, ID=5A			ns	VDD=-30V , VGS=-10V , RG=3.3, ID=-1A	9		ns
Tr	Rise Time				ns		6		ns
Td(off)	Turn-Off Delay Time				ns		39		ns
Tf	Fall Time				ns		33		ns
Ciss	Input Capacitance	VDS=50V , VGS=0V , f=1MHz			pF	VDS=-30V , VGS=0V , f=1MHz	1228		pF
Coss	Output Capacitance				pF		41		pF
Crss	Reverse Transfer Capacitance				pF		29		pF
IS	Continuous Source Current	VG=VD=0V , Force Current		15	A	VG=VD=0V , Force Current		-10.0	A
VSD	Diode Forward Voltage	VGS=0V , IS=20A , TJ=25C		1.2	V	VGS=0V , IS=-1A , TJ=25		-1.2	V