Low On Resistance N channel MOSFET XTX BRT30N100P3 with 30V Drain to Source Voltage and 100A Current
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Product Description
Product Overview
The BRT30N100P3 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features 30V drain-to-source voltage, 100A continuous drain current, and low on-resistance (RDS(ON)
Product Attributes
- Brand: XTX Technology Inc.
- Part Number: BRT30N100P3
- Package: TO-252-2L
- Marking: T30N100
- Ordering Information: 2500pcs/Reel
- Lead Free: Yes
Technical Specifications
| Symbol | Definition | Ratings | Unit |
| Absolute Maximum Ratings | |||
| VDS | Drain-to-Source Voltage | 30 | V |
| VGS | Gate-to-Source Voltage | 20 | V |
| ID | Continuous Drain Current (TC = 25C) | 100 | A |
| ID | Continuous Drain Current (TC = 100C) | 63 | A |
| IDM | Pulsed Drain Current (1) | 400 | A |
| EAS | Single Pulsed Avalanche Energy (2) | 156 | mJ |
| PD | Power Dissipation, TC = 25C | 80 | W |
| RJA | Thermal Resistance, Junction to Ambient(3) | 32 | oC/W |
| RJC | Thermal Resistance, Junction to Case | 1.6 | oC/W |
| TJ, TSTG | Junction & Storage Temperature Range | -55 ~ +150 | oC |
| Electrical Characteristics (TJ=25C, unless otherwise noted) | |||
| V(BR)DSS | Drain-Source Breakdown Voltage (ID = 250A, VGS = 0V) | 30 | V |
| IDSS | Zero Gate Voltage Drain Current (VDS = 30V, VGS = 0V) | 1 | uA |
| IGSS | Gate-Body Leakage Current (VDS = 0V, VGS = 20V) | 100 | nA |
| VGS(TH) | Gate Threshold Voltage (VDS = VGS, ID = 250uA) | 1.1 ~ 2.5 | V |
| RDS(ON) | Static Drain-Source ON-Resistance (VGS = 10V, ID = 30A) | 3.6 | m |
| RDS(ON) | Static Drain-Source ON-Resistance (VGS = 4.5V, ID = 20A) | 6.1 | m |
| Ciss | Input Capacitance (VGS = 0V, VDS = 15V, f = 1MHz) | 2789 | pF |
| Coss | Output Capacitance | 365 | pF |
| Crss | Reverse Transfer Capacitance | 309 | pF |
| Qg | Total Gate Charge (VGS = 0 to 10V, VDS = 15V, ID = 30A) | 58 | nC |
| Qgs | Gate Source Charge | 12 | nC |
| Qgd | Gate Drain("Miller") Charge | 13 | nC |
| td(on) | Turn-On Delay Time (VGS = 10V, VDD = 15V, ID= 30A, RG = 3) | 11 | ns |
| tr | Turn-On Rise Time | 29 | ns |
| td(off) | Turn-Off Delay Time | 47 | ns |
| tf | Turn-Off Fall Time | 18 | ns |
| Drain-Source Diode Characteristics | |||
| IS | Continuous Source Current | 100 | A |
| VSD | Forward on voltage (VGS = 0V, IS = 30A) | 1.2 | V |
| Trr | Reverse Recovery Time (IF = 30A, di/dt = 100A/us) | 16 | ns |
| Qrr | Reverse Recovery Charge | 7 | nC |
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