N channel MOSFET XYD X7N50DHE2 500V 7A low gate charge fast switching for electronic circuits
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Product Description
Product Overview
The X7N50DHE2 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it ideal for applications such as LED power supplies, cell phone chargers, and standby power systems. This MOSFET offers a 500V drain-source voltage, 7A continuous drain current, and a low on-state resistance of 0.9.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: China
- Product Code: X7N50DHE2
- Package Type: TO-252-2L
- Packaging: Tape & Reel
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | - | 500 | V | - |
| Gate-Source Voltage | VGS | -30 | - | 30 | V | - |
| Continuous Drain Current | ID | - | - | 7 | A | TC=25 |
| Pulsed Drain Current | IDM | - | - | 21 | A | - |
| Single Pulse Avalanche Energy | EAS | - | - | 551 | mJ | L=10mH,VD=50V, TC=25 |
| Maximum Power Dissipation | PD | - | - | 64 | W | TC=25 |
| Maximum Power Dissipation | PD | - | - | 2.1 | W | TA=25 |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 | - | 150 | - | |
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Case | Rth(J-c) | - | 1.94 | - | /W | - |
| Thermal resistance, Junction to Ambient | Rth(J-a) | - | 57 | - | - | - |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 500 | - | - | V | VGS=0V,ID=250A |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | A | VDS=500V,VGS=0V |
| Gate-Body Leakage Current,Forward | IGSSF | - | - | 100 | nA | VGS=30V,VDS=0V |
| Gate-Body Leakage Current,Reverse | IGSSR | - | - | -100 | nA | VGS=-30V,VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | 2 | - | 4 | V | VDS=VGS,ID=250A |
| Drain-Source On-State Resistance | RDS(on) | - | 0.7 | 0.9 | VGS=10V,ID=4A | |
| Gate Resistance | Rg | - | 3.2 | - | VGS=0V, VDS=0V, f=1MHz | |
| Forward Transconductance | gfs | - | 6 | - | S | VDS=5V,ID=4A |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | - | 1135 | - | pF | VDS=25V,VGS=0V,f=1.0MHZ |
| Output Capacitance | Coss | - | 103 | - | pF | - |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | - |
| Turn-On Delay Time | td(on) | - | 12 | - | ns | VDD=250V,RG=10,ID=8A,VGS=0V |
| Turn-On Rise Time | tr | - | 13 | - | ns | - |
| Turn-Off Delay Time | td(off) | - | 26 | - | ns | - |
| Turn-Off Fall Time | tf | - | 14 | - | ns | - |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | - | 30 | - | nC | VDS=400V,ID=8A,VGS=10V |
| Gate-Source Charge | Qgs | - | 7 | - | nC | - |
| Gate-Drain Charge | Qg | - | 5 | - | nC | - |
| Reverse Diode | ||||||
| Continuous Diode Forward Current | IS | - | - | 7 | A | - |
| Pulsed Diode Forward Current | ISM | - | - | 21 | A | - |
| Diode Forward Voltage | VSD | - | - | 1.1 | V | IS=4A,VGS=0V |
| Reverse Recovery Time | trr | - | 268 | - | ns | VDS=30V,VGS=0V,IS=1A di/dt=100A/s |
| Reverse Recovery Charge | Qrr | - | 518 | - | nC | - |
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