Low gate charge MOSFET XYD X6P5N065THB3 with 65 Volt drain source voltage and 91 Ampere continuous current rating

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Product Description

Product Overview

The X6P5N065THB3 is an N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability, low gate charge, and is 100% UIS and DVDS tested. This MOSFET is ideal for DC/DC converters and high-frequency switching applications, including synchronous rectification.

Product Attributes

Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
Product Name: X6P5N065THB3
Package: TO-220-3L
Certifications: Lead free product is acquired

Technical Specifications

Parameter	Symbol	Values	Unit	Note/Test Conditions
Absolute Maximum Ratings	VDSS	65	V	-
	VGS	-20 to 20	V	-
	ID (TC=25)	-	91	A	-
	ID (TC=100)	-	64	A	-
	IDM	-	364	A	-
	EAS	-	441	mJ	L=0.5mH,VD=40V, TC=25
	PD (TC=25)	-	115	W	-
	PD (TC=100)	-	57	W	-
	Tj,TSTG	-55 to 175		-
	Rth(J-c)	-	1.4	/W	-
Electrical Characteristics	BVDSS	65	V	VGS=0V,ID=250A
	IDSS	-	1	A	VDS=65V,VGS=0V
	IGSSF	-	100	nA	VGS=20V,VDS=0V
	IGSSR	-	-100	nA	VGS=-20V,VDS=0V
	VGS(th)	2 to 4	V	VDS=VGS,ID=250A
	RDS(on)	5.4 to 6.5	m	VGS=10V,ID=40A
	Rg	-	0.57		VGS=0V, VDS=0V, f=1MHz
	gfs	-	16.5	S	VDS=10V,ID=20A
	Ciss	-	5308	pF	VDS=30V,VGS=0V,f=1.0MHZ
	Coss	-	304	pF	VDS=30V,VGS=0V,f=1.0MHZ
Crss	-	191	pF	VDS=30V,VGS=0V,f=1.0MHZ
td(on)	-	11	ns	VDD=30V,RGEN=3,VGS=10V,RL=1.5
tr	-	6	ns	VDD=30V,RGEN=3,VGS=10V,RL=1.5
td(off)	-	54	ns	VDD=30V,RGEN=3,VGS=10V,RL=1.5
tf	-	14	ns	VDD=30V,RGEN=3,VGS=10V,RL=1.5
Qg	-	90.6	nC	VDS=30V,ID=20A,VGS=10V
Qgs	-	26.2	nC	VDS=30V,ID=20A,VGS=10V
Qgd	-	26.2	nC	VDS=30V,ID=20A,VGS=10V
Reverse Diode	ISD	-	91	A	-
	VSD	-	1.2	V	IS=40A,VGS=0V
	trr	-	45	ns	VGS=0V,IS=20A,di/dt=100A/s
Qrr	-	63	nC	VGS=0V,IS=20A,di/dt=100A/s