npn transistor YONGYUTAI S8050 with plastic encapsulation and 625 milliwatt collector power dissipation
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Product Description
Product Overview
This document details the S8050 NPN transistor, a plastic-encapsulated component designed for general-purpose applications. It offers complementary characteristics to the S8550 transistor and features a collector current of up to 0.5A.
Product Attributes
- Brand: S8050
- Type: NPN Transistor
- Encapsulation: TO-92 Plastic
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCBO | Collector Base Voltage | 40 | V | |||
| VCEO | Collector Emitter Voltage | 25 | V | |||
| VEBO | Emitter Base Voltage | 5 | V | |||
| IC | Collector Current | 500 | mA | |||
| PC | Collector Power Dissipation | (Ta=25C) | 625 | mW | ||
| Tj | Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature | -55 | ~ | +150 | C | |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100A, IE = 0 | 40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 0.1mA, IB = 0 | 25 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 100A, IC = 0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB = 40V, IE = 0 | 100 | nA | ||
| ICEO | Collector cut-off current | VCE = 20V, IE = 0 | 100 | nA | ||
| IEBO | Emitter cut-off current | VEB = 5V, IC = 0 | 100 | nA | ||
| hFE(1) | DC current gain | VCE = 1V, IC = 50mA | 200 | 400 | ||
| hFE(2) | DC current gain | VCE = 5V, IC = 100mA | 85 | |||
| hFE(3) | DC current gain | VCE = 1V, IC = 500mA | 50 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 500mA, IB = 50mA | 0.6 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC = 500mA, IB = 50mA | 1.2 | V | ||
| fT | Transition frequency | VCE=6V, IC=20mA, f=30MHz | 150 | MHz |
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